Datasheet SI2305DS-T1-E3 - Vishay MOSFET, P, TO-236

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P, TO-236

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Docket:
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.052 at VGS = - 4.5 V 0.071 at VGS = - 2.5 V 0.108 at VGS = - 1.8 V ID (A) ± 3.5 ±3 ±2

Specifications:

• Continuous Drain Current Id: -3.5 A
• Current Id Max: 3.5 A
• Drain Source Voltage Vds: -8 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 52 MOhm
• Package / Case: TO-236
• Power Dissipation: 1.25 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -800 mV
• Transistor Case Style: TO-236
• Transistor Polarity: P Channel
• Voltage Vds Typ: -8 V
• Voltage Vgs Max: -800 mV
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Other Names:

SI2305DST1E3, SI2305DS T1 E3