Datasheet SI2311DS-T1-E3 - Vishay P CHANNEL MOSFET, -8 V, 3 A, TO-236

Detailed Description

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -8 V, 3 A, TO-236

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Docket:
Si2311DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.045 at VGS = - 4.5 V 0.072 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 3.5 - 2.8 - 2.0

Specifications:

• Continuous Drain Current Id: -3 A
• Drain Source Voltage Vds: -8 V
• On Resistance Rds(on): 45 MOhm
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -800 mV
• Transistor Polarity: P Channel

RoHS: Yes

Other Names:

SI2311DST1E3, SI2311DS T1 E3