Datasheet SI2315BDS-T1-GE3 - Vishay P CH MOSFET
Part Number: SI2315BDS-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: P CH MOSFET
Specifications:
- Continuous Drain Current Id: -3 A
- Drain Source Voltage Vds: -12 V
- On Resistance Rds(on): 40 MOhm
- Power Dissipation Pd: 750 mW
- Rds(on) Test Voltage Vgs: -4.5 V
- Threshold Voltage Vgs Typ: -900 mV
- Transistor Polarity: P Channel
RoHS: Yes
Other Names:
SI2315BDST1GE3, SI2315BDS T1 GE3
