Datasheet SI2319DS-T1-GE3 - Vishay P CH MOSFET
Part Number: SI2319DS-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: P CH MOSFET
Specifications:
- Continuous Drain Current Id: -2.3 A
- Drain Source Voltage Vds: -40 V
- On Resistance Rds(on): 65 MOhm
- Power Dissipation Pd: 750 mW
- Rds(on) Test Voltage Vgs: -10 V
- Threshold Voltage Vgs Typ: -3 V
- Transistor Polarity: P Channel
RoHS: Yes
Other Names:
SI2319DST1GE3, SI2319DS T1 GE3
