Datasheet SI2325DS-T1-GE3 - Vishay P CH MOSFET, -150 V, 690 mA, TO-236

Detailed Description

Manufacturer: Vishay

Description: P CH MOSFET, -150 V, 690 mA, TO-236

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Docket:
Si2325DS
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 150 RDS(on) () 1.2 at VGS = - 10 V 1.3 at VGS = - 6.0 V ID (A) - 0.69 - 0.66 Qg (Typ.) 7.7

Specifications:

• Continuous Drain Current Id: -690 mA
• Drain Source Voltage Vds: -150 V
• On Resistance Rds(on): 1.3 Ohm
• Rds(on) Test Voltage Vgs: -6 V
• Threshold Voltage Vgs Typ: -4.5 V
• Transistor Polarity: P Channel

RoHS: Yes

Other Names:

SI2325DST1GE3, SI2325DS T1 GE3