Datasheet SI4425BDY-T1-GE3 - Vishay P CH MOSFET
Part Number: SI4425BDY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: P CH MOSFET
Specifications:
- Continuous Drain Current Id: -11.4 A
- Drain Source Voltage Vds: -30 V
- On Resistance Rds(on): 19 MOhm
- Power Dissipation Pd: 2.5 W
- Rds(on) Test Voltage Vgs: -4.5 V
- Threshold Voltage Vgs Typ: -400 mV
- Transistor Polarity: P Channel
RoHS: Y-Ex
Other Names:
SI4425BDYT1GE3, SI4425BDY T1 GE3
