Datasheet SI7848BDP-T1-E3 - Vishay MOSFET, N, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si7848BDP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)f 47 15 nC 40 Qg (Typ.)

Specifications:

• Continuous Drain Current Id: 47 A
• Current Id Max: 16 A
• Drain Source Voltage Vds: 40 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• On Resistance Rds(on): 9 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation Pd: 36 W
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 150 ns
• Transistor Polarity: N Channel
• Voltage Vds Typ: 40 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Other Names:

SI7848BDPT1E3, SI7848BDP T1 E3