Datasheet NDS8958 - Fairchild MOSFET, DUAL, NP, SO-8

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, DUAL, NP, SO-8

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Docket:
July 1996
NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Cont Current Id N Channel 2: 5.3 A
• Cont Current Id P Channel: 4 A
• Continuous Drain Current Id: 4 A
• Current Id Max: 5.3 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 65 MOhm
• On State Resistance Channel 1: 50 MOhm
• On State Resistance P Channel 2: 100 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation N Channel 2: 2 W
• Power Dissipation P Channel 2: 2 W
• Power Dissipation Pd: 2 W
• Pulse Current Idm N Channel 2: 20 A
• Pulse Current Idm P Channel: 15 A
• Pulse Current Idm: 15 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: NDS8958
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vds N Channel 1: 30 V
• Voltage Vds P Channel 1: 30 V
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 20 V

RoHS: Yes

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