Datasheet PHC2300,118 - NXP MOSFET, NP CH, 300 V, SOT96-1

Detailed Description

Manufacturer: NXP

Description: MOSFET, NP CH, 300 V, SOT96-1

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Docket:
SO 8
PHC2300
Complementary enhancement mode MOS transistors
Rev.

05 -- 24 February 2011 Product data sheet
1. Product profile

Specifications:

• Continuous Drain Current Id, N Channel: 340 mA
• Continuous Drain Current Id, P Channel: -235 mA
• Continuous Drain Current Id: 170 mA
• Current Id Max: 340 mA
• Drain Source Voltage Vds, N Channel: 300 V
• Drain Source Voltage Vds, P Channel: -300 V
• Drain Source Voltage Vds: 300 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on), N Channel: 6 Ohm
• On Resistance Rds(on), P Channel: 17 Ohm
• On Resistance Rds(on): 6 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-96
• Power Dissipation: 1.6 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-96
• Transistor Polarity: N and P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 300 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

PHC2300118, PHC2300 118