Datasheet SP8K4FU6TB - Rohm MOSFET, DUAL, NN, 30 V, 9 A

Detailed Description

Manufacturer: Rohm

Description: MOSFET, DUAL, NN, 30 V, 9 A

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Docket:
SP8K4
Transistors
4V Drive Nch+Nch MOS FET
SP8K4
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Simulation Model

Specifications:

• Continuous Drain Current Id: 9 A
• Current Id Max: 9 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 24 MOhm
• Package / Case: SOP-8
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 36 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

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