Datasheet ZXMHC6A07T8TA - Diodes MOSFET, BRIDGE, SM8

Diodes ZXMHC6A07T8TA

Part Number: ZXMHC6A07T8TA

Detailed Description

Manufacturer: Diodes

Description: MOSFET, BRIDGE, SM8

data sheetDownload Data Sheet

Docket:
ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES

Specifications:

  • Cont Current Id P Channel: 1.5 A
  • Continuous Drain Current Id: 1.8 A
  • Current Id Max: 1.8 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 60 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 4
  • On Resistance Rds(on): 1.5 Ohm
  • On State Resistance N Channel Max: 1.8 Ohm
  • On State Resistance P Channel Max: 1.5 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SM-8
  • Power Dissipation Pd: 1.7 W
  • Pulse Current Idm: 8.7 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SMD Marking: ZXMHC6A07
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SM
  • Transistor Polarity: N and P Channel
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds N Channel: 10 V
  • Voltage Vgs Rds P Channel: 10 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: 1 V
  • Voltage Vgs th N Channel 1 Min: 1 V
  • Voltage Vgs th P Channel Min: 1 V

RoHS: Yes

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