Datasheet QS6M4TR - Rohm MOSFET, DUAL, PN, VGS-2.5V

Detailed Description

Manufacturer: Rohm

Description: MOSFET, DUAL, PN, VGS-2.5V

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Docket:
QS6M4
Transistors
2.5V Drive Nch+Pch MOS FET
QS6M4
Structure Silicon P-channel MOS FET Silicon N-channel MOS FET External dimensions (Unit : mm)

Specifications:

• Continuous Drain Current Id: 1.5 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• On Resistance Rds(on): 360 MOhm
• Package / Case: TSMT6
• Power Dissipation Pd: 900 mW
• Pulse Current Idm: 6 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: TSMT
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: 500 mV
• Voltage Vgs th Min: 1.5 V

RoHS: Yes

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• Panasonic - EYGA091203SM
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