Datasheet SP8J1FU6TB - Rohm MOSFET, DUAL, PP, 30 V, 5 A

Detailed Description

Manufacturer: Rohm

Description: MOSFET, DUAL, PP, 30 V, 5 A

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Docket:
SP8J1
Transistors
4V Drive Pch+Pch MOS FET
SP8J1
Structure Silicon P-channel MOS FET External dimensions (Unit : mm)

Simulation Model

Specifications:

• Continuous Drain Current Id: 5 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• On Resistance Rds(on): 63 MOhm
• Package / Case: SOP-8
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 20 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: -2.5 V
• Transistor Case Style: SOP
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: -2.5 V
• Voltage Vgs th Min: -1 V

RoHS: Yes

Accessories:

• Roth Elektronik - RE932-01