Datasheet ZXMN6A09DN8 - Diodes MOSFET, DUAL, N, SO-8

Detailed Description

Manufacturer: Diodes

Description: MOSFET, DUAL, N, SO-8

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Docket:
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.040 @ VGS= 10V 0.060 @ VGS= 4.5V ID (A) 5.6 4.6
Description
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage power management applications.

Simulation Model

Specifications:

• Continuous Drain Current Id: 5.2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 45 MOhm
• On State Resistance Max: 45 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 1.25 W
• Power Dissipation Ptot Max: 1.25 W
• Pulse Current Idm: 17.6 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: ZXMN6A09D
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes