Datasheet SI4910DY-T1-GE3 - Vishay MOSFET, NN CH, DIODE, 40 V, 6 A, 8-SOIC

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NN CH, DIODE, 40 V, 6 A, 8-SOIC

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Docket:
Si4910DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.027 at VGS = 10 V 0.032 at VGS = 4.5 V ID (A)a 6.0 9.6 4.8 Qg (Typ.)

Specifications:

• Current Id Max: 6 A
• Drain Source Voltage Vds: 40 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.022 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fischer Elektronik - FK 244 13 D2 PAK
• Vishay - SI4840BDY-T1-E3

Other Names:

SI4910DYT1GE3, SI4910DY T1 GE3