Datasheet SI3590DV-T1-GE3 - Vishay MOSFET, NP CH, 30 V, W DIODE, TSOP6

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NP CH, 30 V, W DIODE, TSOP6

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Docket:
Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 30 RDS(on) () 0.077 at VGS = 4.5 V 0.120 at VGS = 2.5 V 0.170 at VGS = - 4.5 V 0.300 at VGS = - 2.5 V ID (A) 3 2 -2 - 1.2

Specifications:

• Continuous Drain Current Id: 2.5 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 6
• On Resistance Rds(on): 0.062 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 830 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Case Style: TSOP
• Transistor Polarity: N and P Channel

RoHS: Yes

Other Names:

SI3590DVT1GE3, SI3590DV T1 GE3