Datasheet SI4511DY-T1-E3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, SOIC
Part Number: SI4511DY-T1-E3
Detailed Description
Manufacturer: Vishay
Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC
Specifications:
- Continuous Drain Current Id: 9.6 A
- Drain Source Voltage Vds: 20 V
- On Resistance Rds(on): 14.5 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1.8 V
- Transistor Polarity: N and P Channel
RoHS: Y-Ex
Other Names:
SI4511DYT1E3, SI4511DY T1 E3
