Datasheet SI4936BDY-T1-E3 - Vishay MOSFET, DUAL, N, SOIC

Vishay SI4936BDY-T1-E3

Part Number: SI4936BDY-T1-E3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SOIC

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Specifications:

  • Base Number: 4936
  • Continuous Drain Current Id: 6.8 A
  • Current Id Max: 6.9 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • N-channel Gate Charge: 4.5nC
  • Number of Pins: 8
  • On Resistance Rds(on): 35 MOhm
  • On State Resistance @ Vgs = 4.5V: 51 MOhm
  • On State resistance @ Vgs = 10V: 35 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 2 W
  • Rds(on) Test Voltage Vgs: 20 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 3 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A
  • Roth Elektronik - RE932-01

Other Names:

SI4936BDYT1E3, SI4936BDY T1 E3