Datasheet PMP5501V - NXP TRANSISTOR, DUAL, PNP, SOT-666

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, DUAL, PNP, SOT-666

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Docket:
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
Rev.

03 -- 28 August 2009 Product data sheet
1. Product profile
1.1 General description

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 45 V
• Collector Emitter Voltage Vces: -200 mV
• Current Ic Continuous a Max: 100 mA
• DC Current Gain Min: 200
• DC Current Gain: 2 mA
• Gain Bandwidth ft Min: 100 MHz
• Gain Bandwidth ft Typ: 175 MHz
• Mounting Type: SMD
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-666
• Power Dissipation Pd: 200 mW
• Power Dissipation Ptot Max: 200 mW
• Power Dissipation per device Max: 300 mW
• SMD Marking: ED
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-666
• Transistor Polarity: PNP
• Transistor Type: General Purpose
• Voltage Vcbo: 45 V

RoHS: Yes