Datasheet MBR10H200CT - Taiwan Semiconductor DIODE, SCHOTTKY, 10 A, 200 V

Detailed Description

Manufacturer: Taiwan Semiconductor

Description: DIODE, SCHOTTKY, 10 A, 200 V

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Docket:
MBR10H100CT - MBR10H200CT
Pb
RoHS
COMPLIANCE
10.0 AMPS.

Schottky Barrier Rectifiers

Specifications:

• Current Ifsm: 120 A
• Current Ir Max: 5 µA
• Diode Configuration: Dual Common Cathode
• Diode Type: Schottky
• Forward Current If(AV): 10 A
• Forward Surge Current Ifsm Max: 120 A
• Forward Voltage VF Max: 970 mV
• Forward Voltage: 880 mV
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: +65°C
• Mounting Type: Through Hole
• Number of Pins: 3
• Operating Temperature Range: -65°C to +175°C
• Package / Case: TO-220AB
• Pin Configuration: 1(A1), 2(K1+K2), 3(A2)
• Repetitive Reverse Voltage Vrrm Max: 200 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes

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