Datasheet IDH06SG60C - Infineon DIODE, SCHOTTKY, 600 V, 6 A, TO220-2

Infineon IDH06SG60C

Part Number: IDH06SG60C

Detailed Description

Manufacturer: Infineon

Description: DIODE, SCHOTTKY, 600 V, 6 A, TO220-2

Docket:
IDH06SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery / No forward recovery · Temperature independent switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 20mA2) · Optimized for high temperature operation · Lowest Figure of Merit QC/IF Product Summary V DC QC I F; T C< 130 °C 600 8 6 V nC A
thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDH06SG60C Package PG-TO220-2 Marking D06G60C Pin 1 C Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and

Specifications:

Diode Type: Schottky
Forward Current If(AV): 6 A
Forward Surge Current Ifsm Max: 32 A
Forward Voltage VF Max: 2.3 V
Number of Pins: 2
Operating Temperature Range: -55°C to +175°C
Package / Case: TO-220
Repetitive Reverse Voltage Vrrm Max: 600 V
Reverse Recovery Time trr Max: 10 ns

RoHS: Yes

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