Datasheet 1N5817, 1N5818, 1N5819 (ON Semiconductor) - 2
| Manufacturer | ON Semiconductor |
| Description | Axial Lead Rectifiers |
| Pages / Page | 7 / 2 — 1N5817, 1N5818, 1N5819. MAXIMUM RATINGS. Rating. Symbol. 1N5817. 1N5818. … |
| File Format / Size | PDF / 77 Kb |
| Document Language | English |
1N5817, 1N5818, 1N5819. MAXIMUM RATINGS. Rating. Symbol. 1N5817. 1N5818. 1N5819. Unit. THERMAL CHARACTERISTICS. Characteristic. Max
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1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Non−Repetitive Peak Reverse Voltage VRSM 24 36 48 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, IO 1.0 A RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W) TA 85 80 75 °C Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions, IFSM 25 (for one cycle) A half−wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg −65 to +125 °C Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
(Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 80 °C/W
ELECTRICAL CHARACTERISTICS
(TL = 25°C unless otherwise noted) (Note 1)
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) vF 0.32 0.33 0.34 V (iF = 1.0 A) 0.45 0.55 0.6 (iF = 3.0 A) 0.75 0.875 0.9 Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) IR mA (TL = 25°C) 1.0 1.0 1.0 (TL = 100°C) 10 10 10 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Non−Repetitive Peak Reverse Voltage VRSM 24 36 48 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, IO 1.0 A RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W) TA 85 80 75 °C Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions, IFSM 25 (for one cycle) A half−wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg −65 to +125 °C Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
(Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 80 °C/W
ELECTRICAL CHARACTERISTICS
(TL = 25°C unless otherwise noted) (Note 1)
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) vF 0.32 0.33 0.34 V (iF = 1.0 A) 0.45 0.55 0.6 (iF = 3.0 A) 0.75 0.875 0.9 Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) IR mA (TL = 25°C) 1.0 1.0 1.0 (TL = 100°C) 10 10 10 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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