Datasheet SFH 213 FA (OSRAM) - 2
| Manufacturer | OSRAM |
| Description | Silicon PIN Photodiode |
| Pages / Page | 9 / 2 — Version 1.3. SFH 213 FA. Maximum Ratings. Parameter. Symbol. Values. … |
| File Format / Size | PDF / 274 Kb |
| Document Language | English |
Version 1.3. SFH 213 FA. Maximum Ratings. Parameter. Symbol. Values. Unit. Characteristics
Model Line for this Datasheet
Text Version of Document
Version 1.3 SFH 213 FA Maximum Ratings
(TA = 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T ; T -40 ... 100 °C op stg Reverse voltage V 20 V R Reverse voltage V 50 V R (t < 2 min) Total Power dissipation P 150 mW tot ESD withstand voltage VESD 2000 V (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(TA = 25 °C)
Parameter Symbol Values Unit
Photocurrent (typ (min)) IP 90 (≥ 65) µA (V = 5 V, λ = 870 nm, E = 1 mW/cm2) R e Wavelength of max. sensitivity (typ) λ 900 nm S max Spectral range of sensitivity (typ) λ (typ) 750 nm 10% ... 1100 Radiant sensitive area (typ) A 1.00 mm2 Dimensions of radiant sensitive area (typ) L x W 1 x 1 mm x mm Half angle (typ) ϕ ± 10 ° Dark current (typ (max)) IR 1 (≤ 5) nA (V = 20 V) R Spectral sensitivity of the chip (typ) S 0.65 A / W λ typ (λ = 870 nm) Quantum yield of the chip (typ) η 0.93 Electro (λ = 870 nm) ns /Photon Open-circuit voltage (typ (min)) VO 380 (≥ 300) mV (E = 0.5 mW/cm2, λ = 870 nm) e Short-circuit current (typ) I 42 µA SC (E = 0.5 mW/cm2, λ = 870 nm) e Rise and fall time (typ) t , t 0.005 µs r f (VR = 20 V, RL = 50 Ω, λ = 850 nm) Forward voltage (typ) VF 1.3 V (IF = 100 mA, E = 0) Capacitance (typ) C0 11 pF (V = 0 V, f = 1 MHz, E = 0) R Temperature coefficient of V (typ) TC -2.6 mV / K O V 2015-12-23 2 Document Outline Features: Applications Ordering Information Maximum Ratings Characteristics Relative Spectral Sensitivity Photocurrent / Open-Circuit Voltage Dark Current Capacitance Dark Current Directional Characteristics Package Outline Disclaimer Glossary
(TA = 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T ; T -40 ... 100 °C op stg Reverse voltage V 20 V R Reverse voltage V 50 V R (t < 2 min) Total Power dissipation P 150 mW tot ESD withstand voltage VESD 2000 V (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(TA = 25 °C)
Parameter Symbol Values Unit
Photocurrent (typ (min)) IP 90 (≥ 65) µA (V = 5 V, λ = 870 nm, E = 1 mW/cm2) R e Wavelength of max. sensitivity (typ) λ 900 nm S max Spectral range of sensitivity (typ) λ (typ) 750 nm 10% ... 1100 Radiant sensitive area (typ) A 1.00 mm2 Dimensions of radiant sensitive area (typ) L x W 1 x 1 mm x mm Half angle (typ) ϕ ± 10 ° Dark current (typ (max)) IR 1 (≤ 5) nA (V = 20 V) R Spectral sensitivity of the chip (typ) S 0.65 A / W λ typ (λ = 870 nm) Quantum yield of the chip (typ) η 0.93 Electro (λ = 870 nm) ns /Photon Open-circuit voltage (typ (min)) VO 380 (≥ 300) mV (E = 0.5 mW/cm2, λ = 870 nm) e Short-circuit current (typ) I 42 µA SC (E = 0.5 mW/cm2, λ = 870 nm) e Rise and fall time (typ) t , t 0.005 µs r f (VR = 20 V, RL = 50 Ω, λ = 850 nm) Forward voltage (typ) VF 1.3 V (IF = 100 mA, E = 0) Capacitance (typ) C0 11 pF (V = 0 V, f = 1 MHz, E = 0) R Temperature coefficient of V (typ) TC -2.6 mV / K O V 2015-12-23 2 Document Outline Features: Applications Ordering Information Maximum Ratings Characteristics Relative Spectral Sensitivity Photocurrent / Open-Circuit Voltage Dark Current Capacitance Dark Current Directional Characteristics Package Outline Disclaimer Glossary
