Datasheet ADA4092-4 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | Micropower, OVP, RRIO, Quad Op Amp |
| Pages / Page | 21 / 6 — ADA4092-4. Table 4. Parameter. Symbol. Test Conditions/Comments. Min. … |
| Revision | B |
| File Format / Size | PDF / 664 Kb |
| Document Language | English |
ADA4092-4. Table 4. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
Text Version of Document
ADA4092-4
VSY = ±15.0 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise noted.
Table 4. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V −1.5 +0.2 +1.5 mV OS −40°C ≤ T ≤ +125°C −2.5 +2.5 mV A Offset Voltage Drift ΔV /ΔT 3 µV/°C OS Input Bias Current I −60 −50 nA B −40°C ≤ T ≤ +85°C −80 +80 nA A −40°C ≤ T ≤ +125°C −500 +500 nA A Input Offset Current I −4 +1 +4 nA OS −40°C ≤ T ≤ +85°C −10 +10 nA A −40°C ≤ T ≤ +125°C −140 +140 nA A Input Voltage Range IVR −15 +15 V Common-Mode Rejection Ratio CMRR V = −15.0 V to +15.0 V 90 103 dB CM −40°C ≤ T ≤ +125°C 87 dB A Large Signal Voltage Gain A R = 100 kΩ, V = ±14.7 V 116 118 dB VO L O −40°C ≤ T ≤ +125°C 108 dB A R = 10 kΩ, V = ±14.7 V 102 104 dB L O −40°C ≤ T ≤ +125°C 93 dB A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 14.970 14.980 V OH L −40°C ≤ T ≤ +125°C 14.950 V A R = 10 kΩ to GND 14.900 14.915 V L −40°C ≤ T ≤ +125°C 14.800 V A Output Voltage Low V R = 100 kΩ to GND −14.985 −14.980 V OL L −40°C ≤ T ≤ +125°C −14.965 V A R = 10 kΩ to GND −14.970 −14.950 V L −40°C ≤ T ≤ +125°C −14.940 V A Short-Circuit Limit I Source/sink ±20 mA SC Closed-Loop Impedance Z f = 1 MHz, A = +1 68 Ω OUT V POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 36 V 98 112 dB SY −40°C ≤ T ≤ +125°C 90 dB A Supply Current per Amplifier I I = 0 mA 200 250 µA SY O −40°C ≤ T ≤ +125°C 350 µA A DYNAMIC PERFORMANCE Slew Rate SR R = 100 kΩ, C = 30 pF 0.4 V/µs L L Settling Time t To 0.01% 25 µs S Gain Bandwidth Product GBP 1.4 MHz Phase Margin Φ 69 Degrees M Channel Separation CS f = 1 kHz 100 dB NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.8 µV p-p n Voltage Noise Density e f = 1 kHz 30 nV/√Hz n Rev. B | Page 5 of 20 Document Outline Features Applications Pin Configuration General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Theory of Operation Input Stage Output Stage Input Overvoltage Protection Comparator Operation Outline Dimensions Ordering Guide
VSY = ±15.0 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise noted.
Table 4. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V −1.5 +0.2 +1.5 mV OS −40°C ≤ T ≤ +125°C −2.5 +2.5 mV A Offset Voltage Drift ΔV /ΔT 3 µV/°C OS Input Bias Current I −60 −50 nA B −40°C ≤ T ≤ +85°C −80 +80 nA A −40°C ≤ T ≤ +125°C −500 +500 nA A Input Offset Current I −4 +1 +4 nA OS −40°C ≤ T ≤ +85°C −10 +10 nA A −40°C ≤ T ≤ +125°C −140 +140 nA A Input Voltage Range IVR −15 +15 V Common-Mode Rejection Ratio CMRR V = −15.0 V to +15.0 V 90 103 dB CM −40°C ≤ T ≤ +125°C 87 dB A Large Signal Voltage Gain A R = 100 kΩ, V = ±14.7 V 116 118 dB VO L O −40°C ≤ T ≤ +125°C 108 dB A R = 10 kΩ, V = ±14.7 V 102 104 dB L O −40°C ≤ T ≤ +125°C 93 dB A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 14.970 14.980 V OH L −40°C ≤ T ≤ +125°C 14.950 V A R = 10 kΩ to GND 14.900 14.915 V L −40°C ≤ T ≤ +125°C 14.800 V A Output Voltage Low V R = 100 kΩ to GND −14.985 −14.980 V OL L −40°C ≤ T ≤ +125°C −14.965 V A R = 10 kΩ to GND −14.970 −14.950 V L −40°C ≤ T ≤ +125°C −14.940 V A Short-Circuit Limit I Source/sink ±20 mA SC Closed-Loop Impedance Z f = 1 MHz, A = +1 68 Ω OUT V POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 36 V 98 112 dB SY −40°C ≤ T ≤ +125°C 90 dB A Supply Current per Amplifier I I = 0 mA 200 250 µA SY O −40°C ≤ T ≤ +125°C 350 µA A DYNAMIC PERFORMANCE Slew Rate SR R = 100 kΩ, C = 30 pF 0.4 V/µs L L Settling Time t To 0.01% 25 µs S Gain Bandwidth Product GBP 1.4 MHz Phase Margin Φ 69 Degrees M Channel Separation CS f = 1 kHz 100 dB NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.8 µV p-p n Voltage Noise Density e f = 1 kHz 30 nV/√Hz n Rev. B | Page 5 of 20 Document Outline Features Applications Pin Configuration General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Theory of Operation Input Stage Output Stage Input Overvoltage Protection Comparator Operation Outline Dimensions Ordering Guide
