Datasheet AD8036, AD8037 (Analog Devices) - 3

AD8036/AD8037 ABSOLUTE MAXIMUM RATINGS1 MAXIMUM POWER DISSIPATION
Supply Voltage . 12.6 V The maximum power that can be safely dissipated by these Voltage Swing × Bandwidth Product . 350 V-MHz devices is limited by the associated rise in junction temperature. |V The maximum safe junction temperature for plastic encapsulated H–VIN| . ≤ 6.3 V |V devices is determined by the glass transition temperature of the L–VIN| . ≤ 6.3 V Internal Power Dissipation2 plastic, approximately 150°C. Exceeding this limit temporarily Plastic DIP Package (N) . 1.3 Watts may cause a shift in parametric performance due to a change Small Outline Package (SO) . 0.9 Watts in the stresses exerted on the die by the package. Exceeding Input Voltage (Common Mode) . ± V a junction temperature of 175°C for an extended period can S Differential Input Voltage . ± 1.2 V result in device failure. Output Short Circuit Duration While the AD8036 and AD8037 are internally short circuit pro- . Observe Power Derating Curves tected, this may not be sufficient to guarantee that the maxi- Storage Temperature Range N, R . –65°C to +125°C mum junction temperature (150°C) is not exceeded under all Operating Temperature Range (A Grade) . – 40°C to +85°C conditions. To ensure proper operation, it is necessary to observe Lead Temperature Range (Soldering 10 sec) . 300°C the maximum power derating curves. NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma-
2.0
nent damage to the device. This is a stress rating only; functional operation of the
8-LEAD PLASTIC DIP TJ = +150 C
device at these or any other conditions above those indicated in the operational
PACKAGE
section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Watts –
2
1.5
Specification is for device in free air: 8-Lead Plastic DIP: θJA = 90°C/W 8-Lead SOIC: θJA = 155°C/W 8-Lead Cerdip: θJA = 110°C/W.
1.0 METALIZATION PHOTO
Dimensions shown in inches and (mm). Connect Substrate to –V
8-LEAD SOIC
S.
0.5 PACKAGE –IN VH +VS MAXIMUM POWER DISSIPATION 2 8 7 0–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE – C 0.046
Figure 2. Plot of Maximum Power Dissipation vs.
(1.17) 6 OUT
Temperature
ORDERING GUIDE 3 4 5
8 0 3 6
Temperature Package Package Model Range Description Option +IN –V V AD8036 S L
AD8036AN –40°C to +85°C Plastic DIP N-8
0.050 (1.27)
AD8036AR –40°C to +85°C SOIC SO-8
–IN V +V H S
AD8036AR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8036AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8
2 8 7
AD8036ACHIPS –40°C to +85°C Die AD8036-EB Evaluation Board 5962-9559701MPA –55°C to +125°C Cerdip Q-8 AD8037AN –40°C to +85°C Plastic DIP N-8
0.046 (1.17)
AD8037AR –40°C to +85°C SOIC SO-8
6 OUT
AD8037AR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8037AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8 AD8037ACHIPS –40°C to +85°C Die AD8037-EB Evaluation Board
3 4 5
8 0 3 7
AD8037 +IN –VS VL 0.050 (1.27) CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although
WARNING!
the AD8036/AD8037 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
ESD SENSITIVE DEVICE
are recommended to avoid performance degradation or loss of functionality. REV. B –3–