AD8132.5Maximum Power DissipationTJ = +150 C The maximum power that can be safely dissipated by the AD813 is limited by the associated rise in junction temperature. The maximum safe junction temperature for the plastic encap- 2.0 sulated parts is determined by the glass transition temperature 14-LEAD DIP PACKAGE of the plastic, about 150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in 1.5 the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result 14-LEAD SOIC in device failure. 1.0 While the AD813 is internally short circuit protected, this may not be enough to guarantee that the maximum junction tem- MAXIMUM POWER DISSIPATION – Watts perature (150°C) is not exceeded under all conditions. To 0.5 ensure proper operation, it is important to observe the derating –50 –40 –30 –20 –100102030405060708090 curves. AMBIENT TEMPERATURE – C It must also be noted that in (noninverting) gain configurations Figure 3. Maximum Power Dissipation vs. Ambient (with low values of gain resistor), a high level of input overdrive Temperature can result in a large input error current, which may result in a significant power dissipation in the input stage. This power must be included when computing the junction temperature rise due to total internal power. METALIZATION PHOTO Dimensions shown in inches and (mm). 0.124 (3.15)+IN2VS–VV+IN3S–S–12111111109 –IN3–IN2 138 OUT3OUT2 140.057(1.45)DISABLE1 17 OUT1DISABLE2 23456DISABLE3V+IN1–IN1S+CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily WARNING! accumulate on the human body and test equipment and can discharge without detection. Although the AD813 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD ESD SENSITIVE DEVICE precautions are recommended to avoid performance degradation or loss of functionality. –6– REV. B