Datasheet OP467 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | Quad Precision, High Speed Operational Amplifier |
| Pages / Page | 21 / 4 — OP467. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. … |
| Revision | I |
| File Format / Size | PDF / 537 Kb |
| Document Language | English |
OP467. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
Text Version of Document
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OP467 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
@ VS = ±15.0 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.2 0.5 mV −40°C ≤ TA ≤ +85°C 1 mV Input Bias Current IB VCM = 0 V 150 600 nA VCM = 0 V, −40°C ≤ TA ≤ +85°C 150 700 nA Input Offset Current IOS VCM = 0 V 10 100 nA VCM = 0 V, −40°C ≤ TA ≤ +85°C 10 150 nA Common-Mode Rejection CMR VCM = ±12 V 80 90 dB CMR VCM = ±12 V, −40°C ≤ TA ≤ +85°C 80 88 dB Large Signal Voltage Gain AVO RL = 2 kΩ 83 86 dB RL = 2 kΩ, −40°C ≤ TA ≤ +85°C 77.5 dB Offset Voltage Drift ΔVOS/ΔT 3.5 μV/°C Bias Current Drift ΔIB/ΔT 0.2 pA/°C Long-Term Offset Voltage Drift1 ΔVOS/ΔT 750 μV OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 2 kΩ ±13.0 ±13.5 V RL = 2 kΩ, −40°C ≤ TA ≤ +85°C ±12.9 ±13.12 V POWER SUPPLY Power Supply Rejection Ratio PSRR ±4.5 V ≤ VS ≤ ±18 V 96 120 dB −40°C ≤ TA ≤ +85°C 86 115 dB Supply Current ISY VO = 0 V 8 10 mA VO = 0 V, −40°C ≤ TA ≤ +85°C 13 mA Supply Voltage Range VS ±4.5 ±18 V DYNAMIC PERFORMANCE Gain Bandwidth Product GBP AV = +1, CL = 30 pF 28 MHz Slew Rate SR VIN = 10 V step, RL = 2 kΩ, CL = 30 pF AV = +1 125 170 V/μs AV = −1 350 V/μs Full-Power Bandwidth BWρ VIN = 10 V step 2.7 MHz Settling Time tS To 0.01%, VIN = 10 V step 200 ns Phase Margin θ0 45 Degrees Input Capacitance Common Mode 2.0 pF Differential 1.0 pF NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 0.15 μV p-p Voltage Noise Density eN f = 1 kHz 6 nV/√Hz Current Noise Density iN f = 1 kHz 0.8 pA/√Hz 1 Long-term offset voltage drift is guaranteed by 1000 hrs. Life test performed on three independent wafer lots at 125°C, with an LTPD of 1.3. Rev. I | Page 3 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS WAFER TEST LIMITS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE DICE CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION OUTPUT SHORT-CIRCUIT PERFORMANCE UNUSED AMPLIFIERS PCB LAYOUT CONSIDERATIONS GROUNDING POWER SUPPLY CONSIDERATIONS SIGNAL CONSIDERATIONS PHASE REVERSAL SATURATION RECOVERY TIME HIGH SPEED INSTRUMENTATION AMPLIFIER 2 MHz BIQUAD BAND-PASS FILTER FAST I-TO-V CONVERTER OP467 SPICE MARCO-MODEL OUTLINE DIMENSIONS ORDERING GUIDE
OP467 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
@ VS = ±15.0 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.2 0.5 mV −40°C ≤ TA ≤ +85°C 1 mV Input Bias Current IB VCM = 0 V 150 600 nA VCM = 0 V, −40°C ≤ TA ≤ +85°C 150 700 nA Input Offset Current IOS VCM = 0 V 10 100 nA VCM = 0 V, −40°C ≤ TA ≤ +85°C 10 150 nA Common-Mode Rejection CMR VCM = ±12 V 80 90 dB CMR VCM = ±12 V, −40°C ≤ TA ≤ +85°C 80 88 dB Large Signal Voltage Gain AVO RL = 2 kΩ 83 86 dB RL = 2 kΩ, −40°C ≤ TA ≤ +85°C 77.5 dB Offset Voltage Drift ΔVOS/ΔT 3.5 μV/°C Bias Current Drift ΔIB/ΔT 0.2 pA/°C Long-Term Offset Voltage Drift1 ΔVOS/ΔT 750 μV OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 2 kΩ ±13.0 ±13.5 V RL = 2 kΩ, −40°C ≤ TA ≤ +85°C ±12.9 ±13.12 V POWER SUPPLY Power Supply Rejection Ratio PSRR ±4.5 V ≤ VS ≤ ±18 V 96 120 dB −40°C ≤ TA ≤ +85°C 86 115 dB Supply Current ISY VO = 0 V 8 10 mA VO = 0 V, −40°C ≤ TA ≤ +85°C 13 mA Supply Voltage Range VS ±4.5 ±18 V DYNAMIC PERFORMANCE Gain Bandwidth Product GBP AV = +1, CL = 30 pF 28 MHz Slew Rate SR VIN = 10 V step, RL = 2 kΩ, CL = 30 pF AV = +1 125 170 V/μs AV = −1 350 V/μs Full-Power Bandwidth BWρ VIN = 10 V step 2.7 MHz Settling Time tS To 0.01%, VIN = 10 V step 200 ns Phase Margin θ0 45 Degrees Input Capacitance Common Mode 2.0 pF Differential 1.0 pF NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 0.15 μV p-p Voltage Noise Density eN f = 1 kHz 6 nV/√Hz Current Noise Density iN f = 1 kHz 0.8 pA/√Hz 1 Long-term offset voltage drift is guaranteed by 1000 hrs. Life test performed on three independent wafer lots at 125°C, with an LTPD of 1.3. Rev. I | Page 3 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS WAFER TEST LIMITS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE DICE CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION OUTPUT SHORT-CIRCUIT PERFORMANCE UNUSED AMPLIFIERS PCB LAYOUT CONSIDERATIONS GROUNDING POWER SUPPLY CONSIDERATIONS SIGNAL CONSIDERATIONS PHASE REVERSAL SATURATION RECOVERY TIME HIGH SPEED INSTRUMENTATION AMPLIFIER 2 MHz BIQUAD BAND-PASS FILTER FAST I-TO-V CONVERTER OP467 SPICE MARCO-MODEL OUTLINE DIMENSIONS ORDERING GUIDE
