Datasheet LTC2325-12 (Analog Devices) - 7

LTC2325-12
aDc TiMing characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C (Note 4). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tDCNVSDOZ Bus Relinquish Time After CNV↑ (Note 11) l 3 ns tDCNVSDOV SDO Valid Delay from CNV↓ (Note 11) l 3 ns tDSCKHCNVH SCK Delay Time to CNV↑ (Note 11) l 0 ns
CMOS I/O Mode: DDR, CMOS/LVDS = GND, SDR/ DDR = OVDD
tSCK SCK Period l 18.2 ns tSCKH SCK High Time l 8.2 ns tSCKL SCK Low Time l 8.2 ns tHSDO_DDR SDO Data Remains Valid Delay from CLKOUT↓ CL = 5pF (Note 12) l 0 1.5 ns tDSCKCLKOUT SCK to CLKOUT Delay (Note 12) l 2 4.5 ns tDCNVSDOZ Bus Relinquish Time After CNV↑ (Note 11) l 3 ns tDCNVSDOV SDO Valid Delay from CNV↓ (Note 11) l 3 ns tDSCKHCNVH SCK Delay Time to CNV↑ (Note 11) l 0 ns
LVDS I/O Mode: SDR, CMOS/LVDS = OVDD, SDR/DDR = GND
tSCK SCK Period l 9.1 ns tSCKH SCK High Time l 4.1 ns tSCKL SCK Low Time l 4.1 ns tHSDO_SDR SDO Data Remains Valid Delay from CLKOUT↓ CL = 5pF (Note 12) l 0 1.5 ns tDSCKCLKOUT SCK to CLKOUT Delay (Note 12) l 2 4 ns tDSCKHCNVH SCK Delay Time to CNV↑ (Note 11) l 0 ns
LVDS I/O Mode: DDR, CMOS/LVDS = OVDD, SDR/DDR = OVDD = 2.5V
tSCK SCK Period l 18.2 ns tSCKH SCK High Time l 8.2 ns tSCKL SCK Low Time l 8.2 ns tHSDO_DDR SDO Data Remains Valid Delay from CLKOUT↓ CL = 5pF (Note 12) l 0 1.5 ns tDSCKCLKOUT SCK to CLKOUT Delay (Note 12) l 2 4 ns tDSCKHCNVH SCK Delay Time to CNV↑ (Note 11) l 0 ns
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings untrimmed deviation from ideal first and last code transitions and includes may cause permanent damage to the device. Exposure to any Absolute the effect of offset error. Maximum Rating condition for extended periods may affect device
Note 8:
All specifications in dB are referred to a full-scale ±4.096V input reliability and lifetime. with REF = 4.096V.
Note 2:
All voltage values are with respect to ground.
Note 9:
When REFOUT1,2,3,4 is overdriven, the internal reference buffer
Note 3:
When these pin voltages are taken below ground, or above VDD or must be turned off by setting REFBUFEN = 0V. OVDD, they will be clamped by internal diodes. This product can handle input
Note 10:
fSMPL = 5MHz, IREFOUT1,2,3,4 varies proportionally with sample rate. currents up to 100mA below ground, or above VDD or OVDD, without latch-up.
Note 11:
Guaranteed by design, not subject to test.
Note 4
: VDD = 5V, OVDD = 2.5V, REFOUT1,2,3,4 = 4.096V, fSMPL = 5MHz.
Note 12:
Parameter tested and guaranteed at OVDD = 1.71V and OVDD = 2.5V.
Note 5:
Recommended operating conditions.
Note 13:
tSCK of 9.1ns allows a shift clock frequency up to 105MHz for
Note 6:
Integral nonlinearity is defined as the deviation of a code from a rising edge capture. straight line passing through the actual endpoints of the transfer curve.
Note 14:
Temperature coefficient is calculated by dividing the maximum The deviation is measured from the center of the quantization band. change in output voltage by the specified temperature range.
Note 7:
Bipolar zero error is the offset voltage measured from –0.5LSB
Note 15:
CNV is driven from a low jitter digital source, typically at OV when the output code flickers between 0 0000 0000 0000 and 1 1111 DD logic levels. 1111 1111. Full-scale bipolar error is the worst-case of –FS or +FS 232512f For more information www.linear.com/LTC2325-12 7 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Pin Configuration Electrical Characteristics Converter Characteristics Dynamic Accuracy Internal Reference Characteristics Digital Inputs And Digital Outputs Power Requirements ADC Timing Characteristics Typical Performance Characteristics Pin Functions Functional Block Diagram Timing Diagram Applications Information Package Description Typical Application Related Parts