Datasheet LTC6990 (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | TimerBlox: Voltage Controlled Silicon Oscillator |
| Pages / Page | 30 / 5 — ELECTRICAL CHARACTERISTICS. Note 11:. TYPICAL PERFORMANCE CHARACTERISTICS … |
| File Format / Size | PDF / 410 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. Note 11:. TYPICAL PERFORMANCE CHARACTERISTICS V+ = 3.3V, unless otherwise noted. Frequency Error
Model Line for this Datasheet
- LTC6990CDCB#PBF LTC6990CDCB#TRMPBF LTC6990CDCB#TRPBF LTC6990CS6#PBF LTC6990CS6#TRMPBF LTC6990CS6#TRPBF LTC6990HDCB#PBF LTC6990HDCB#TRMPBF LTC6990HDCB#TRPBF LTC6990HS6#PBF LTC6990HS6#TRMPBF LTC6990HS6#TRPBF LTC6990IDCB#PBF LTC6990IDCB#TRMPBF LTC6990IDCB#TRPBF LTC6990IS6#PBF LTC6990IS6#TRMPBF LTC6990IS6#TRPBF LTC6990MPS6#PBF LTC6990MPS6#TRMPBF LTC6990MPS6#TRPBF
Text Version of Document
LTC6990
ELECTRICAL CHARACTERISTICS Note 11:
Long-term drift of silicon oscillators is primarily due to the the square root and multiply by the typical drift number. For instance, a movement of ions and impurities within the silicon and is tested at 30°C year is 8.77kHr and would yield a drift of 266ppm at 90ppm/√kHr. Drift under otherwise nominal operating conditions. Long-term drift is specified without power applied to the device may be approximated as 1/10th of the as ppm/√kHr due to the typically nonlinear nature of the drift. To calculate drift with power, or 9ppm/√kHr for a 90ppm/√kHr device. drift for a set time period, translate that time into thousands of hours, take
TYPICAL PERFORMANCE CHARACTERISTICS V+ = 3.3V, unless otherwise noted. Frequency Error Frequency Error vs RSET vs Supply Voltage Frequency Error vs Temperature
4 0.5 1.5 TA = 25°C TA = 25°C V+ = 3.3V 3 GUARANTEED MAX 0.4 DIVCODE = 4 OVER TEMPERATURE 0.3 1.0 2 0.2 RSET = 800k 0.5 1 TYPICAL MAX 0.1 RSET = 50k 0 90% OF UNITS 0 0.0 RSET = 200k RSET = 800k –1 TYPICAL MIN –0.1 ERROR (%) –0.2 –0.5 R FREQUENCY ERROR (%) –2 FREQUENCY ERROR (%) SET = 50k RSET = 267k GUARANTEED MIN –0.3 –1.0 –3 OVER TEMPERATURE –0.4 –4 –0.5 –1.5 10 100 1000 2 3 4 5 6 –50 –25 0 25 50 75 100 125 RSET (kΩ) SUPPLY VOLTAGE (V) TEMPERATURE (°C) 6990 G01 6990 G02 6990 G03
VSET vs ISET VSET vs Supply Voltage VSET vs Temperature
1.003 1.003 1.020 V+ = 3.3V RSET = 200k RSET = 200k TA = 25°C TA = 25°C 1.015 3 TYPICAL PARTS 1.010 1.002 1.002 1.005 (V) (V) (V) 1.000 V SET V SET V SET 0.995 1.001 1.001 0.990 0.985 1.000 1.000 0.980 0 10 20 30 40 2 3 4 5 6 –50 –25 0 25 50 75 100 125 ISET (µA) SUPPLY VOLTAGE (V) TEMPERATURE (°C) 6990 G04 6990 G05 6990 G06 6990fc For more information www.linear.com/LTC6990 5 Document Outline Features Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Related Parts
ELECTRICAL CHARACTERISTICS Note 11:
Long-term drift of silicon oscillators is primarily due to the the square root and multiply by the typical drift number. For instance, a movement of ions and impurities within the silicon and is tested at 30°C year is 8.77kHr and would yield a drift of 266ppm at 90ppm/√kHr. Drift under otherwise nominal operating conditions. Long-term drift is specified without power applied to the device may be approximated as 1/10th of the as ppm/√kHr due to the typically nonlinear nature of the drift. To calculate drift with power, or 9ppm/√kHr for a 90ppm/√kHr device. drift for a set time period, translate that time into thousands of hours, take
TYPICAL PERFORMANCE CHARACTERISTICS V+ = 3.3V, unless otherwise noted. Frequency Error Frequency Error vs RSET vs Supply Voltage Frequency Error vs Temperature
4 0.5 1.5 TA = 25°C TA = 25°C V+ = 3.3V 3 GUARANTEED MAX 0.4 DIVCODE = 4 OVER TEMPERATURE 0.3 1.0 2 0.2 RSET = 800k 0.5 1 TYPICAL MAX 0.1 RSET = 50k 0 90% OF UNITS 0 0.0 RSET = 200k RSET = 800k –1 TYPICAL MIN –0.1 ERROR (%) –0.2 –0.5 R FREQUENCY ERROR (%) –2 FREQUENCY ERROR (%) SET = 50k RSET = 267k GUARANTEED MIN –0.3 –1.0 –3 OVER TEMPERATURE –0.4 –4 –0.5 –1.5 10 100 1000 2 3 4 5 6 –50 –25 0 25 50 75 100 125 RSET (kΩ) SUPPLY VOLTAGE (V) TEMPERATURE (°C) 6990 G01 6990 G02 6990 G03
VSET vs ISET VSET vs Supply Voltage VSET vs Temperature
1.003 1.003 1.020 V+ = 3.3V RSET = 200k RSET = 200k TA = 25°C TA = 25°C 1.015 3 TYPICAL PARTS 1.010 1.002 1.002 1.005 (V) (V) (V) 1.000 V SET V SET V SET 0.995 1.001 1.001 0.990 0.985 1.000 1.000 0.980 0 10 20 30 40 2 3 4 5 6 –50 –25 0 25 50 75 100 125 ISET (µA) SUPPLY VOLTAGE (V) TEMPERATURE (°C) 6990 G04 6990 G05 6990 G06 6990fc For more information www.linear.com/LTC6990 5 Document Outline Features Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Related Parts
