Datasheet DN3535 (Microchip) - 2

DN3535 Thermal Characteristics I I Power Dissipation Package D D I † I (continuous)† (pulsed) @T = 25OC DR DRM A
TO-243AA 230mA 500mA 1.6W‡ 230mA 500mA
Notes:
† I (continuous) is limited by max rated T . D j ‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T = 25OC unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-source breakdown voltage 350 - - V V = -5.0V, I = 1.0µA DSS GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 10µA GS(OFF) DS D ΔV Change in V with temperature - - -4.5 mV/OC V = 15V, I = 10µA GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = ±20V, V = 0V GSS GS DS - - 1.0 µA V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current D(OFF) - - 1.0 mA V = 0.8 Max Rating, DS V = -5.0V, T = 125OC GS A I Saturated drain-to-source current 200 - - mA V = 0V, V = 15V DSS GS DS R Static drain-to-source on-state = 0V, I = 150mA DS(ON) resistance - - 10 Ω VGS D ΔR Change in R with temperature - - 1.1 %/OC V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transconductance 200 - - mmho V = 10V, I = 100mA FS DS D C Input capacitance - - 360 ISS C Common source output capacitance - - 40 pF V = -5.0V, V = 25V, GS DS OSS f = 1.0MHz C Reverse transfer capacitance - - 10 RSS t Turn-on delay time - - 15 d(ON) V = 25V, DD t Rise time - - 20 r ns I = 150mA, D t Turn-off delay time - - 20 R = 25Ω, GEN d(OFF) V = 0V to -10V GS t Fall time - - 30 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
90%
VDD INPUT Pulse
R 10%
Generator
L
-10V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-DN3535
Supertex inc.
A062713 2
www.supertex.com