Datasheet IRFP360, IRFP362 (New Jersey Semiconductor) - 2
| Manufacturer | New Jersey Semiconductor |
| Description | Avalanche-Energy-Rated N-Channel Power MOSFETs |
| Pages / Page | 2 / 2 — IRFP360, IRFP362. ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = … |
| File Format / Size | PDF / 650 Kb |
| Document Language | English |
IRFP360, IRFP362. ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Model Line for this Datasheet
Text Version of Document
IRFP360, IRFP362
ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Parameter Type Mm BVDSS Drain-to-Source Breakdown Voltage IRFP380
IHFP362 400 -V VQS -0V. ID -2SOMA RDS(on) Static Drain-to-Source
On-State Resistance CD IRFP360 — 0.18 020 Q VQS . iov. ID -ISA IRFP362 -0.20 0.25 'D(on) On-Stale Dram Current @ IRFP3SO 23 -A VDS> IRFP362 20 Typ. Max Units Tesi Conditions !D(on) VGS -10V VDS VGS-vGS(th) O*« Threshold Voltage ALL 2.0 -4.0 V 9(5 Forward Transconductance (3) ALL 14 21 -S(D) -250 -1000 M* VDS * ° 8 « ALL -500 nA VGS -20V 'OSS Zef° Gat* VottAfl* Drain Current
ALL 'CSS Gate-to-Source Leakage Forward -x RDS
ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Parameter Type Mm BVDSS Drain-to-Source Breakdown Voltage IRFP380
IHFP362 400 -V VQS -0V. ID -2SOMA RDS(on) Static Drain-to-Source
On-State Resistance CD IRFP360 — 0.18 020 Q VQS . iov. ID -ISA IRFP362 -0.20 0.25 'D(on) On-Stale Dram Current @ IRFP3SO 23 -A VDS> IRFP362 20 Typ. Max Units Tesi Conditions !D(on) VGS -10V VDS VGS-vGS(th) O*« Threshold Voltage ALL 2.0 -4.0 V 9(5 Forward Transconductance (3) ALL 14 21 -S(D) -250 -1000 M* VDS * ° 8 « ALL -500 nA VGS -20V 'OSS Zef° Gat* VottAfl* Drain Current
ALL 'CSS Gate-to-Source Leakage Forward -x RDS
