Datasheet LTC1759 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Smart Battery Charger |
| Pages / Page | 28 / 3 — ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over … |
| File Format / Size | PDF / 302 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over the full operating temperature range (TJ = 0
Model Line for this Datasheet
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LTC1759
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range (TJ = 0
°
C to 100
°
C), otherwise specifications are TA = 25
°
C. VCC = DCIN = 18V, VBAT1, 2 = 12.6V, VDD = 3.3V unless otherwise specified. PARAMETER CONDITIONS MIN TYP MAX UNITS
BOOST Pin Current VBOOST = VSW + 8V, 0V ≤ VSW ≤ 20V TGATE High 2 3 mA TGATE Low 2 3 mA VBOOST Threshold to Turn TGATE Off Measured at (VBOOST – VSW) (Note 6) Low to High ● 6.8 7.3 7.6 V Hysteresis 0.25 V BOOSTC Pin Current VBOOSTC = VCC + 8V 1 mA Sense Amplifier CA1 Gain and Input Offset Voltage 11V ≤ VCC ≤ 24V, 0V ≤ VBAT ≤ 20V (With RS2 = RS3 = 200Ω) RSET = 4.93k ● 92 100 108 mV (Measured Across RS1) (Note 4) RSET = 49.3k 7 10 13 mV CA1 Bias Current (SENSE, BAT1) VSDB = High ● – 50 –120 µA VSDB = Low (Shutdown) –10 µA CA1 Input Common Mode Range ● – 0.25 VCC – 0.3 V SPIN Input Current VSDB = High, VSPIN = 12.6V ● 2 mA VSDB = Low 10 µA CL1 Turn-On Threshold 0.5mA Output Current 87 92 97 mV CL1 Transconductance Output Current from 50µA to 500µA 0.5 1 3 mho CLP Input Current 0.5mA Output Current 1 3 µA CLN Input Current 0.5mA Output Current 0.8 2 mA CA2 Transconductance VC = 1V, IVC = ±1µA 150 200 300 µmho VA Transconductance (Note 5) Ouput Current from 50µA to 500µA 0.21 0.6 1 mho
Gate Drivers
VGBIAS VCC ≥ 11V, IGBIAS ≤ 15mA, VSDB = High ● 8.4 9.1 9.6 V VTGATE High (VTGAGE – VSW) ITGATE ≤ 20mA ● 5.6 6.6 V VBGATE High IBGATE ≤ 20mA ● 6.2 7.2 V VTGATE Low (VTGATE – VSW) ITGATE ≤ 50mA ● 0.8 V VBGATE Low IBGATE ≤ 50mA ● 0.8 V INFET “ON” Clamping Voltage (VCC – VINFET) ● 6.5 7.8 9 V INFET “ON” Drive Current VINFET = VCC – 6V ● 8 20 mA INFET “OFF” Clamping Voltage VCC Not Connected, IINFET < – 2µA 1.4 V INFET “OFF” Drive Current VCC = 12.4V, (VCC – VINFET) ≥ 2V –2.5 mA VTGATE, VBGATE at Shutdown VSDB = Low, ITGATE = IBGATE = 10µA ● 1 V
Trip Points
DCDIV Threshold VDCDIV Rising from 0.8V to 1.2V ● 0.9 1.0 1.1 V DCDIV Hysteresis 25 mV DCDIV Input Bias Current VDCDIV = 1V ● 100 nA Power-Fail Indicator (VBAT2 ≥ VDCIN) (Note 7) AC_PRESENT = 1, VDCIN = 6V ● 0.84 0.89 0.97 V/V Power-Fail Indicator Hysteresis (VBAT2 ≥ VDCIN) AC_PRESENT = 1, VDCIN = 6V 0.02 V/V SYNC Pin Threshold 0.9 1.4 2.0 V SYNC Pin Input Current VSYNC = 0V – 500 µA VSYNC = 2V –30 µA 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range (TJ = 0
°
C to 100
°
C), otherwise specifications are TA = 25
°
C. VCC = DCIN = 18V, VBAT1, 2 = 12.6V, VDD = 3.3V unless otherwise specified. PARAMETER CONDITIONS MIN TYP MAX UNITS
BOOST Pin Current VBOOST = VSW + 8V, 0V ≤ VSW ≤ 20V TGATE High 2 3 mA TGATE Low 2 3 mA VBOOST Threshold to Turn TGATE Off Measured at (VBOOST – VSW) (Note 6) Low to High ● 6.8 7.3 7.6 V Hysteresis 0.25 V BOOSTC Pin Current VBOOSTC = VCC + 8V 1 mA Sense Amplifier CA1 Gain and Input Offset Voltage 11V ≤ VCC ≤ 24V, 0V ≤ VBAT ≤ 20V (With RS2 = RS3 = 200Ω) RSET = 4.93k ● 92 100 108 mV (Measured Across RS1) (Note 4) RSET = 49.3k 7 10 13 mV CA1 Bias Current (SENSE, BAT1) VSDB = High ● – 50 –120 µA VSDB = Low (Shutdown) –10 µA CA1 Input Common Mode Range ● – 0.25 VCC – 0.3 V SPIN Input Current VSDB = High, VSPIN = 12.6V ● 2 mA VSDB = Low 10 µA CL1 Turn-On Threshold 0.5mA Output Current 87 92 97 mV CL1 Transconductance Output Current from 50µA to 500µA 0.5 1 3 mho CLP Input Current 0.5mA Output Current 1 3 µA CLN Input Current 0.5mA Output Current 0.8 2 mA CA2 Transconductance VC = 1V, IVC = ±1µA 150 200 300 µmho VA Transconductance (Note 5) Ouput Current from 50µA to 500µA 0.21 0.6 1 mho
Gate Drivers
VGBIAS VCC ≥ 11V, IGBIAS ≤ 15mA, VSDB = High ● 8.4 9.1 9.6 V VTGATE High (VTGAGE – VSW) ITGATE ≤ 20mA ● 5.6 6.6 V VBGATE High IBGATE ≤ 20mA ● 6.2 7.2 V VTGATE Low (VTGATE – VSW) ITGATE ≤ 50mA ● 0.8 V VBGATE Low IBGATE ≤ 50mA ● 0.8 V INFET “ON” Clamping Voltage (VCC – VINFET) ● 6.5 7.8 9 V INFET “ON” Drive Current VINFET = VCC – 6V ● 8 20 mA INFET “OFF” Clamping Voltage VCC Not Connected, IINFET < – 2µA 1.4 V INFET “OFF” Drive Current VCC = 12.4V, (VCC – VINFET) ≥ 2V –2.5 mA VTGATE, VBGATE at Shutdown VSDB = Low, ITGATE = IBGATE = 10µA ● 1 V
Trip Points
DCDIV Threshold VDCDIV Rising from 0.8V to 1.2V ● 0.9 1.0 1.1 V DCDIV Hysteresis 25 mV DCDIV Input Bias Current VDCDIV = 1V ● 100 nA Power-Fail Indicator (VBAT2 ≥ VDCIN) (Note 7) AC_PRESENT = 1, VDCIN = 6V ● 0.84 0.89 0.97 V/V Power-Fail Indicator Hysteresis (VBAT2 ≥ VDCIN) AC_PRESENT = 1, VDCIN = 6V 0.02 V/V SYNC Pin Threshold 0.9 1.4 2.0 V SYNC Pin Input Current VSYNC = 0V – 500 µA VSYNC = 2V –30 µA 3
