Datasheet LT1169 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp |
| Pages / Page | 12 / 1 — FEATU. DESCRIPTIO. Input Bias Current, Warmed Up: 20pA Max. 100% Tested … |
| File Format / Size | PDF / 302 Kb |
| Document Language | English |
FEATU. DESCRIPTIO. Input Bias Current, Warmed Up: 20pA Max. 100% Tested Low Voltage Noise: 8nV/. Hz Max. APPLICATI
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LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp
U FEATU S RE DESCRIPTIO
■
Input Bias Current, Warmed Up: 20pA Max
The LT1169 achieves a new standard of excellence in noise ■
100% Tested Low Voltage Noise: 8nV/
√
Hz Max
performance for a dual JFET op amp. For the first time low ■ S8 and N8 Package Standard Pinout voltage noise (6nV/√Hz) is simultaneously offered with ■ Very Low Input Capacitance: 1.5pF extremely low current noise (1fA/√Hz), providing the low- ■ Voltage Gain: 1.2 Million Min est total noise for high impedance transducer applications. ■ Offset Voltage: 2mV Max Unlike most JFET op amps, the very low input bias current ■ Input Resistance: 1013Ω (5pA Typ) is maintained over the entire common mode ■ Gain-Bandwidth Product: 5.3MHz Typ range which results in an extremely high input resistance ■ Guaranteed Specifications with ±5V Supplies (1013Ω). When combined with a very low input capaci- ■ Guaranteed Matching Specifications tance (1.5pF) an extremely high input impedance results, making the LT1169 the first choice for amplifying low level
O U
signals from high impedance transducers. The low input
APPLICATI S
capacitance also assures high gain linearity when buffering ■ AC signals from high impedance transducers. Photocurrent Amplifiers ■ Hydrophone Amplifiers The LT1169 is unconditionally stable for gains of 1 or more, ■ High Sensitivity Piezoelectric Accelerometers even with 1000pF capacitive loads. Other key features are ■ Low Voltage and Current Noise Instrumentation 0.6mV VOS and a voltage gain over 4 million. Each indi- Amplifier Front Ends vidual amplifier is 100% tested for voltage noise, slew rate ■ Two and Three Op Amp Instrumentation Amplifiers (4.2V/µs), and gain-bandwidth product (5.3MHz). ■ Active Filters The LT1169 is offered in the S8 and N8 packages. A full set of matching specifications are provided for precision instrumentation amplifier front ends. Specifica- tions at ±5V supply operation are also provided. For an , LTC and LT are registered trademarks of Linear Technology Corporation. even lower voltage noise please see the LT1113 data sheet.
O U TYPICAL APPLICATI Low Noise Light Sensor with DC Servo 1kHz Output Voltage Noise
C1
Density vs Source Resistance
2pF 10k √Hz) R1 – 2 – 1M VN 1k + 1 1/2 LT1169 VOUT RSOURCE 3 + C2 D2 0.022µF 1N914 100 CD +V R2 8 D1 – 6 100k R3 1N914 10 VN 1k 7 2N3904 1/2 LT1169 SOURCE + TA = 25°C 5 RESISTANCE VS = ±15V HAMAMATSU R5 R4 ONLY 4 TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/ 1 S1336-5BK 10k 1k 100 1k 10k 100k 1M 10M 100M 1G (908) 231-0960 –V R2C2 > C1R1 SOURCE RESISTANCE (Ω) CD = PARASITIC PHOTODIODE CAPACITANCE 2 V– V V OUT = 100mV/µWATT FOR 200nm WAVE LENGTH N = √(VOP AMP)2 + 4kTRS + 2qIBRS 330mV/µWATT FOR 633nm WAVE LENGTH LT1169 • TA01 LT1169 • TA02 1
U FEATU S RE DESCRIPTIO
■
Input Bias Current, Warmed Up: 20pA Max
The LT1169 achieves a new standard of excellence in noise ■
100% Tested Low Voltage Noise: 8nV/
√
Hz Max
performance for a dual JFET op amp. For the first time low ■ S8 and N8 Package Standard Pinout voltage noise (6nV/√Hz) is simultaneously offered with ■ Very Low Input Capacitance: 1.5pF extremely low current noise (1fA/√Hz), providing the low- ■ Voltage Gain: 1.2 Million Min est total noise for high impedance transducer applications. ■ Offset Voltage: 2mV Max Unlike most JFET op amps, the very low input bias current ■ Input Resistance: 1013Ω (5pA Typ) is maintained over the entire common mode ■ Gain-Bandwidth Product: 5.3MHz Typ range which results in an extremely high input resistance ■ Guaranteed Specifications with ±5V Supplies (1013Ω). When combined with a very low input capaci- ■ Guaranteed Matching Specifications tance (1.5pF) an extremely high input impedance results, making the LT1169 the first choice for amplifying low level
O U
signals from high impedance transducers. The low input
APPLICATI S
capacitance also assures high gain linearity when buffering ■ AC signals from high impedance transducers. Photocurrent Amplifiers ■ Hydrophone Amplifiers The LT1169 is unconditionally stable for gains of 1 or more, ■ High Sensitivity Piezoelectric Accelerometers even with 1000pF capacitive loads. Other key features are ■ Low Voltage and Current Noise Instrumentation 0.6mV VOS and a voltage gain over 4 million. Each indi- Amplifier Front Ends vidual amplifier is 100% tested for voltage noise, slew rate ■ Two and Three Op Amp Instrumentation Amplifiers (4.2V/µs), and gain-bandwidth product (5.3MHz). ■ Active Filters The LT1169 is offered in the S8 and N8 packages. A full set of matching specifications are provided for precision instrumentation amplifier front ends. Specifica- tions at ±5V supply operation are also provided. For an , LTC and LT are registered trademarks of Linear Technology Corporation. even lower voltage noise please see the LT1113 data sheet.
O U TYPICAL APPLICATI Low Noise Light Sensor with DC Servo 1kHz Output Voltage Noise
C1
Density vs Source Resistance
2pF 10k √Hz) R1 – 2 – 1M VN 1k + 1 1/2 LT1169 VOUT RSOURCE 3 + C2 D2 0.022µF 1N914 100 CD +V R2 8 D1 – 6 100k R3 1N914 10 VN 1k 7 2N3904 1/2 LT1169 SOURCE + TA = 25°C 5 RESISTANCE VS = ±15V HAMAMATSU R5 R4 ONLY 4 TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/ 1 S1336-5BK 10k 1k 100 1k 10k 100k 1M 10M 100M 1G (908) 231-0960 –V R2C2 > C1R1 SOURCE RESISTANCE (Ω) CD = PARASITIC PHOTODIODE CAPACITANCE 2 V– V V OUT = 100mV/µWATT FOR 200nm WAVE LENGTH N = √(VOP AMP)2 + 4kTRS + 2qIBRS 330mV/µWATT FOR 633nm WAVE LENGTH LT1169 • TA01 LT1169 • TA02 1
