Datasheet RHK3845MKDICE (Analog Devices) - 7

ManufacturerAnalog Devices
DescriptionRadiation Hardened High Voltage Synchronous Step-Down Regulator Kit with Power NMOS FETs
Pages / Page14 / 7 — typical perForMance characteristics. Feedback Voltage Reference. …
File Format / SizePDF / 225 Kb
Document LanguageEnglish

typical perForMance characteristics. Feedback Voltage Reference. Operating Switching Frequency. VCC Supply Current vs TID

typical perForMance characteristics Feedback Voltage Reference Operating Switching Frequency VCC Supply Current vs TID

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DICE/DWF SPECIFICATION RH3845MKDICE
typical perForMance characteristics Feedback Voltage Reference Operating Switching Frequency VCC Supply Current vs TID vs TID vs TID
4.0 1.4 350 3.5 1.3 325 3.0 1.2 300 2.5 1.1 2.0 275 1.0 1.5 250 0.9 1.0 VCC SUPPLY CURRENT (mA) REFERENCE VOLTAGE (V) SWITCHING FREQUENCY (kHz) 225 0.5 0.8 0 0.7 200 0 50 100 150 200 0 50 100 150 200 0 50 100 150 200 TOTAL DOSE (kRADS) TOTAL DOSE (kRADS) TOTAL DOSE (kRADS) RH3845MK G01 RH3845MK G02 RH3845MK G03 This wand can be made by pushing a small diameter Teflon tubing Rad Hard die require special handling as compared to standard IC chips. onto the tip of a steel-tipped wand. The inside diameter of the Teflon Rad Hard die are susceptible to surface damage because there is no tip should match the die size for efficient pickup. The tip of the Teflon silicon nitride passivation as on standard die. Silicon nitride protects should be cut square and flat to ensure good vacuum to die surface. the die surface from scratches by its hard and dense properties. The Ensure the Teflon tip remains clean from debris by inspecting under passivation on Rad Hard die is silicon dioxide that is much “softer” stereoscope. than silicon nitride. During die attach, care must be exercised to ensure no tweezers touch LTC recommends that die handling be performed with extreme care so the top of the die. as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. 7 Document Outline Description Typical Application Description absolute Maximum Ratings Dice Pinout Table 1: Dice/DWF Electrical Test Limits Table 2: Electrical Characteristics Table 3: Electrical Characteristics Table 4: Electrical Test Requirements Total Dose Bias Circuit — Run Mode Total Dose Bias Circuit — Shutdown Mode Burn-in Circuit — run mode Typical Performance characteristics DESCRIPTION ABSOLUTE MAXIMUM RATINGS TABLE 1 Dice/DWF Electrical Test Limits TABLE 2 Electrical Characteristics TABLE 3 Electrical Characteristics Table 5. Electrical Test Requirements Total Dose Bias Circuit Burn-In Circuit Typical Performance Characteristics preirradiation Typical Performance Characteristics Post-irradiation Revision History