Datasheet LT1101 (Analog Devices) - 7

LT1101
ELECTRICAL CHARACTERISTICS VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100, 0
°
C
≤
TA
≤
70
°
C, unless otherwise noted (Note 4). LT1101AC LT1101C/S SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
GE Gain Error G = 100, VO = 0.1V to 3.5V, RL = 50k 0.017 0.065 0.018 0.095 % G = 10, VCM = 0.15V, RL = 50k 0.010 0.060 0.012 0.080 % TCGE Gain Error Drift RL = 50k (Note 2) 1 4 1 5 ppm/°C GNL Gain Nonlinearity G = 100, RL = 50k 25 80 25 100 ppm G = 10, RL = 50k (Note 2) 4 10 4 11 ppm VOS Input Offset Voltage 70 250 85 350 µV LT1101SW 300 800 µV ∆VOS/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C LT1101SW 1.2 4.5 µV/°C lOS Input Offset Current 0.14 0.70 0.17 1.10 nA ∆IOS/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7 pA/°C IB Input Bias Current 6 9 6 11 nA ∆IB/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C CMRR Common Mode G = 100, VCM = 0.07V to 3.3V 93 105 90 104 dB Rejection Ratio G = 10, VCM = 0.07V to 3V, VREF = 0.15V 82 99 80 98 dB IS Supply Current 80 120 85 145 µA VO Maximum 0utput Output High, 50k to GND 4.0 4.2 4.0 4.2 V Voltage Swing Output High, 2k to GND 3.3 3.8 3.3 3.8 V Output Low, VREF = 0, No Load 4 7 4 7 mV Output Low, VREF = 0, 2k to GND 0.6 1.2 0.6 1.2 mV Output Low, VREF = 0, ISINK = 100µA 100 150 100 150 mV
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 4:
These test conditions are equivalent to VS = 4.9V, – 0.1V, of a device may be impaired. VCM = 0V, VREF(PIN1) = 0V.
Note 2:
This parameter is not tested. It is guaranteed by design and by
Note 5:
Minimum supply voltage is guaranteed by the power supply inference from other tests. rejection test. The LT1101 actually works at 1.8V supply with minimal
Note 3:
This parameter is tested on a sample basis only. degradation in performance. 1101fa 7