Datasheet LT1190 (Analog Devices) - 4

LT1190
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range of 0
°
C
≤
TA
≤
70
°
C. VS =
±
5V, Pin 5 open circuit unless otherwise noted. LT1190C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage N8 Package ● 3 11 mV SO-8 Package 18 mV ∆VOS/∆T Input VOS Drift ● 16 µV/°C IOS Input Offset Current ● 0.2 1.7 µA IB Input Bias Current ● ±0.5 ±2.5 µA CMRR Common Mode Rejection Ratio VCM = – 2.5V to 3.5V ● 58 70 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±5V ● 58 70 dB AVOL Large-Signal Voltage Gain RL = 1k, VO = ±3V ● 9 20 V/mV RL = 100Ω, VO = ±3V ● 2 6 V/mV VOUT Output Voltage Swing RL = 1k ● ±3.7 ±3.9 V IS Supply Current ● 32 38 mA Shutdown Supply Current Pin 5 at V – (Note 8) ● 1.4 2.1 mA ISHDN Shutdown Pin Current Pin 5 at V – ● 20 µA
Note 1:
Absolute maximum ratings are those values beyond which the life
Note 6:
Settling time measurement techniques are shown in “Take the of the device may be impaired. Guesswork Out of Settling Time Measurements,” EDN, September 19,
Note 2:
A heat sink is required to keep the junction temperature below 1985. AV = –1, RL = 1k. absolute maximum when the output is shorted.
Note 7:
NTSC (3.58MHz). For RL = 1k, Diff AV = 0.1%, Diff Ph = 0.06°.
Note 3:
Exceeding the input common mode range may cause the output
Note 8:
See Applications section for shutdown at elevated temperatures. to invert. Do not operate the shutdown above TJ > 125°C.
Note 4:
Slew rate is measured between ± 1V on the output, with a ± 3V
Note 9:
AC parameters are 100% tested on the ceramic and plastic DIP input step. packaged parts (J and N suffix) and are sample tested on every lot of the
Note 5:
Full-power bandwidth is calculated from the slew rate SO packaged parts (S suffix). measurement: FPBW = SR/2πVP.
Optional Offset Nulling Circuit
5V 3 + 7 6 LT1190 2 – 4 8 –5V 1 INPUT OFFSET VOLTAGE CAN BE ADJUSTED OVER A ±150mV RANGE WITH A 1kΩ TO 10kΩ POTENTIOMETER LT1190 • TA03 4