Datasheet LT1990 (Analog Devices) - 9
| Manufacturer | Analog Devices |
| Description | ±250V Input Range G = 1, 10, Micropower, Difference Amplifier |
| Pages / Page | 16 / 9 — 15V ELECTRICAL CHARACTERISTICS. The. denotes the specifications which … |
| File Format / Size | PDF / 277 Kb |
| Document Language | English |
15V ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the temperature range of –40. 125. C. VS =
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LT1990 ±
15V ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the temperature range of –40
°
C
≤
TA
≤
125
°
C. VS =
±
15V, RL = 10k, VCM = VREF = 0V, G = 1, 10, unless otherwise noted. (Notes 4, 6) LT1990H SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOSH Input Offset Voltage Hysteresis, RTI (Note 11) ● 250 µV PSRR Power Supply Rejection Ratio, RTI VS = ±1.35V to ±18V ● 77 dB Minimum Supply Voltage Guaranteed by PSRR ● ±1.35 V IS Supply Current ● 330 µA VOUT Output Voltage Swing ● ±14.2 V ISC Output Short-Circuit Current Short to V– ● 1.5 mA Short to V+ ● 7 mA SR Slew Rate G = 1, VOUT = ±10V ● 0.1 V/µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings sampled at these temperatures. The LT1990I is guaranteed to meet may cause permanent damage to the device. Exposure to any Absolute specified performance from –40°C to 85°C. The LT1990H is guaranteed to Maximum Rating condition for extended periods may affect device meet specified performance from –40°C to 125°C. reliability and lifetime.
Note 6:
G = 10 limits are guaranteed by correlation to G = 1 tests and gain
Note 2:
ESD (Electrostatic Discharge) sensitive device. Extensive use of error tests at G = 10. ESD protection devices are used internal to the LT1990, however, high
Note 7:
Limits are guaranteed by correlation to –5V to 80V CMRR tests. electrostatic discharge can damage or degrade the device. Use proper ESD
Note 8:
VS = 3V limits are guaranteed by correlation to VS = 5V and handling precautions. VS = ±15V tests.
Note 3:
A heat sink may be required to keep the junction temperature
Note 9:
VS = 5V limits are guaranteed by correlation to VS = 3V and below absolute maximum. VS = ±15V tests.
Note 4:
The LT1990C/LT1990I are guaranteed functional over the
Note 10:
This parameter is not 100% tested. operating temperature range of – 40°C to 85°C. The LT1990H is
Note 11:
Hysteresis in offset voltage is created by package stress that guaranteed functional over the operating temperature range of –40°C differs depending on whether the IC was previously at a higher or lower to 125°C. temperature. Offset voltage hysteresis is always measured at 25°C, but the
Note 5:
The LT1990C is guaranteed to meet the specified performance IC is cycled to 85°C I-grade (70°C C-grade or 125°C H-grade) or –40°C from 0°C to70°C and is designed, characterized and expected to meet I/H-grade (0°C C-grade) before successive measurement. specified performance from –40°C to 85°C but is not tested or QA 1990fb 9
15V ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the temperature range of –40
°
C
≤
TA
≤
125
°
C. VS =
±
15V, RL = 10k, VCM = VREF = 0V, G = 1, 10, unless otherwise noted. (Notes 4, 6) LT1990H SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOSH Input Offset Voltage Hysteresis, RTI (Note 11) ● 250 µV PSRR Power Supply Rejection Ratio, RTI VS = ±1.35V to ±18V ● 77 dB Minimum Supply Voltage Guaranteed by PSRR ● ±1.35 V IS Supply Current ● 330 µA VOUT Output Voltage Swing ● ±14.2 V ISC Output Short-Circuit Current Short to V– ● 1.5 mA Short to V+ ● 7 mA SR Slew Rate G = 1, VOUT = ±10V ● 0.1 V/µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings sampled at these temperatures. The LT1990I is guaranteed to meet may cause permanent damage to the device. Exposure to any Absolute specified performance from –40°C to 85°C. The LT1990H is guaranteed to Maximum Rating condition for extended periods may affect device meet specified performance from –40°C to 125°C. reliability and lifetime.
Note 6:
G = 10 limits are guaranteed by correlation to G = 1 tests and gain
Note 2:
ESD (Electrostatic Discharge) sensitive device. Extensive use of error tests at G = 10. ESD protection devices are used internal to the LT1990, however, high
Note 7:
Limits are guaranteed by correlation to –5V to 80V CMRR tests. electrostatic discharge can damage or degrade the device. Use proper ESD
Note 8:
VS = 3V limits are guaranteed by correlation to VS = 5V and handling precautions. VS = ±15V tests.
Note 3:
A heat sink may be required to keep the junction temperature
Note 9:
VS = 5V limits are guaranteed by correlation to VS = 3V and below absolute maximum. VS = ±15V tests.
Note 4:
The LT1990C/LT1990I are guaranteed functional over the
Note 10:
This parameter is not 100% tested. operating temperature range of – 40°C to 85°C. The LT1990H is
Note 11:
Hysteresis in offset voltage is created by package stress that guaranteed functional over the operating temperature range of –40°C differs depending on whether the IC was previously at a higher or lower to 125°C. temperature. Offset voltage hysteresis is always measured at 25°C, but the
Note 5:
The LT1990C is guaranteed to meet the specified performance IC is cycled to 85°C I-grade (70°C C-grade or 125°C H-grade) or –40°C from 0°C to70°C and is designed, characterized and expected to meet I/H-grade (0°C C-grade) before successive measurement. specified performance from –40°C to 85°C but is not tested or QA 1990fb 9
