Datasheet LTC3415 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 7A, PolyPhase Synchronous Step-Down Regulator |
| Pages / Page | 28 / 3 — The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply … |
| File Format / Size | PDF / 322 Kb |
| Document Language | English |
The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply over the full operating
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LTC3415
The ELECTRICAL CHARACTERISTICS
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 3.3V unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IQ Input DC Bias Current (Note 4) Active Current VFB = 0.57V, MODE = 0V 1350 μA Sleep VFB = 0.63V, MODE = VIN 450 μA Shutdown VRUN = 0V 0.2 5 μA fOSC Switching Frequency 1.3 1.5 1.7 MHz fSYNC SYNC Capture Range 0.75 2.25 MHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 32 40 mΩ RNFET RDS(ON) of N-Channel FET ISW = 100mA 25 32 mΩ ILIMIT Peak Current Limit VITH = 1V (Note 6) 11 13 15 A VUVLO Undervoltage Lockout Threshold SVIN Rising 2.05 2.2 2.35 V SVIN Falling 1.85 2.0 2.15 V ILSW SW Leakage Current VRUN = 0V, VIN = 5.5V 0.1 5 μA SS Delay Internal Soft-Start Delay 140 μs gm Error Amplifi er’s Transconductance 1.7 2 2.2 mmho RUN Run Input Threshold RUN Rising 1.4 1.5 1.6 V RUN Falling 1.2 1.3 1.4 V PGOOD Delay PGOOD Falling Edge Delay 35 μs %MARGINING Output Voltage Margining Percentage MGN HI, BSEL LOW 3 5 7 % MGN HI, BSEL HI 8 10 12 % MGN HI, BSEL = SVIN/2 13 15 17 % MGN LOW, BSEL LOW –3 –5 –7 % MGN LOW, BSEL HI –8 –10 –12 % MGN LOW, BSEL = SVIN/2 –13 –15 –17 % TRACK Tracking Threshold (Rising) RUN = VIN 0.57 V Tracking Threshold (Falling) RUN = 0V 0.18 V Tracking Disable Threshold VIN – 0.5 V VFB Slavemode VFB Slavemode (EA Disable) Threshold VIN – 0.5 V ITH Internal Switch Over Threshold for Internal VIN – 0.5 V Compensation OV Output Overvoltage Threshold VFB Rising 7 10 13 % UV Output Undervoltage Threshold VFB Falling –7 –10 –13 % VHYST OV/UV Hysteresis VFB Returning to Regulation 1 3 %
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
TJ is calculated from the ambient temperature TA and power may cause permanent damage to the device. Exposure to any Absolute dissipation as follows: LTC3415: TJ = TA + PD (34°C/W). Maximum Rating condition for extended periods may affect device
Note 6:
Current Limit is measured with internal servo loop while forcing reliability and lifetime. VITH = 1V.
Note 2:
The LTC3415E is guaranteed to meet performance specifi cations
Note 7:
This IC includes overtemperature protection that is intended from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating to protect the device during momentary overload conditions. Junction temperature range are assured by design, characterization and correlation temperature will exceed 125°C when overtemperature protection is active. with statistical process controls. Continuous operation above the specifi ed maximum operating junction
Note 3:
The LTC3415 is tested in a feedback loop that adjusts VFB to temperature may impair device reliability. achieve a specifi ed error amplifi er output voltage (ITH).
Note 4:
Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. 3415fa 3
The ELECTRICAL CHARACTERISTICS
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 3.3V unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IQ Input DC Bias Current (Note 4) Active Current VFB = 0.57V, MODE = 0V 1350 μA Sleep VFB = 0.63V, MODE = VIN 450 μA Shutdown VRUN = 0V 0.2 5 μA fOSC Switching Frequency 1.3 1.5 1.7 MHz fSYNC SYNC Capture Range 0.75 2.25 MHz RPFET RDS(ON) of P-Channel FET ISW = 100mA 32 40 mΩ RNFET RDS(ON) of N-Channel FET ISW = 100mA 25 32 mΩ ILIMIT Peak Current Limit VITH = 1V (Note 6) 11 13 15 A VUVLO Undervoltage Lockout Threshold SVIN Rising 2.05 2.2 2.35 V SVIN Falling 1.85 2.0 2.15 V ILSW SW Leakage Current VRUN = 0V, VIN = 5.5V 0.1 5 μA SS Delay Internal Soft-Start Delay 140 μs gm Error Amplifi er’s Transconductance 1.7 2 2.2 mmho RUN Run Input Threshold RUN Rising 1.4 1.5 1.6 V RUN Falling 1.2 1.3 1.4 V PGOOD Delay PGOOD Falling Edge Delay 35 μs %MARGINING Output Voltage Margining Percentage MGN HI, BSEL LOW 3 5 7 % MGN HI, BSEL HI 8 10 12 % MGN HI, BSEL = SVIN/2 13 15 17 % MGN LOW, BSEL LOW –3 –5 –7 % MGN LOW, BSEL HI –8 –10 –12 % MGN LOW, BSEL = SVIN/2 –13 –15 –17 % TRACK Tracking Threshold (Rising) RUN = VIN 0.57 V Tracking Threshold (Falling) RUN = 0V 0.18 V Tracking Disable Threshold VIN – 0.5 V VFB Slavemode VFB Slavemode (EA Disable) Threshold VIN – 0.5 V ITH Internal Switch Over Threshold for Internal VIN – 0.5 V Compensation OV Output Overvoltage Threshold VFB Rising 7 10 13 % UV Output Undervoltage Threshold VFB Falling –7 –10 –13 % VHYST OV/UV Hysteresis VFB Returning to Regulation 1 3 %
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
TJ is calculated from the ambient temperature TA and power may cause permanent damage to the device. Exposure to any Absolute dissipation as follows: LTC3415: TJ = TA + PD (34°C/W). Maximum Rating condition for extended periods may affect device
Note 6:
Current Limit is measured with internal servo loop while forcing reliability and lifetime. VITH = 1V.
Note 2:
The LTC3415E is guaranteed to meet performance specifi cations
Note 7:
This IC includes overtemperature protection that is intended from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating to protect the device during momentary overload conditions. Junction temperature range are assured by design, characterization and correlation temperature will exceed 125°C when overtemperature protection is active. with statistical process controls. Continuous operation above the specifi ed maximum operating junction
Note 3:
The LTC3415 is tested in a feedback loop that adjusts VFB to temperature may impair device reliability. achieve a specifi ed error amplifi er output voltage (ITH).
Note 4:
Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. 3415fa 3
