Datasheet MBRS120T3G, SBRS8120T3G (ON Semiconductor) - 2
| Manufacturer | ON Semiconductor |
| Description | Surface Mount Schottky Power Rectifier |
| Pages / Page | 4 / 2 — MBRS120T3G, SBRS8120T3G. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. … |
| Revision | 8 |
| File Format / Size | PDF / 132 Kb |
| Document Language | English |
MBRS120T3G, SBRS8120T3G. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. THERMAL CHARACTERISTICS. Characteristic
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MBRS120T3G, SBRS8120T3G MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A (TL = 115°C) 1.0 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead RθJL °C/W (TL = 25°C) 12
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1) VF V (iF = 1.0 A, TJ = 25°C) 0.6 Maximum Instantaneous Reverse Current (Note 1) iR mA (Rated dc Voltage, TJ = 25°C) 1.0 (Rated dc Voltage, TJ = 100°C) 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100 50 (AMPS) 1 30 T T C = 100°C J = 125°C 20 0.7 0.5 (mA) 10 100°C 5 3 0.3 2 ARD CURRENT 75°C W 0.2 1 0.5 0.1 0.3 0.2 25 0.07 °C TC = 25°C , REVERSE CURRENT 0.1 ANEOUS FOR 0.05 I R 0.05 ANT 0.03 0.03 0.02 0.02 , INST 0.01 i F 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 4 8 12 16 20 24 28 32 36 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current www.onsemi.com 2
MBRS120T3G, SBRS8120T3G MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A (TL = 115°C) 1.0 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead RθJL °C/W (TL = 25°C) 12
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1) VF V (iF = 1.0 A, TJ = 25°C) 0.6 Maximum Instantaneous Reverse Current (Note 1) iR mA (Rated dc Voltage, TJ = 25°C) 1.0 (Rated dc Voltage, TJ = 100°C) 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100 50 (AMPS) 1 30 T T C = 100°C J = 125°C 20 0.7 0.5 (mA) 10 100°C 5 3 0.3 2 ARD CURRENT 75°C W 0.2 1 0.5 0.1 0.3 0.2 25 0.07 °C TC = 25°C , REVERSE CURRENT 0.1 ANEOUS FOR 0.05 I R 0.05 ANT 0.03 0.03 0.02 0.02 , INST 0.01 i F 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 4 8 12 16 20 24 28 32 36 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current www.onsemi.com 2
