Datasheet IRF4905PbF (International Rectifier)
| Manufacturer | International Rectifier |
| Pages / Page | 9 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| File Format / Size | PDF / 186 Kb |
| Document Language | English |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
Model Line for this Datasheet
Text Version of Document
PD - 94816 IRF4905PbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.02Ω P-Channel G Fully Avalanche Rated ID = -74A Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low TO-220AB thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -74 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -52 A IDM Pulsed Drain Current -260 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 930 mJ IAR Avalanche Current -38 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 11/6/03
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low TO-220AB thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -74 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -52 A IDM Pulsed Drain Current -260 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 930 mJ IAR Avalanche Current -38 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 11/6/03
