Datasheet SUP90P06-09L (Vishay) - 4
| Manufacturer | Vishay |
| Description | P-Channel 60 V (D-S) 175 °C MOSFET |
| Pages / Page | 7 / 4 — SUP90P06-09L. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction … |
| Revision | B |
| File Format / Size | PDF / 106 Kb |
| Document Language | English |
SUP90P06-09L. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Source-Drain Diode Forward Voltage
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Text Version of Document
SUP90P06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2.0 100 V GS = 10 V I D = 30 A 1.7 c A n ( a t t n s ) i d 1.4 e r s r T e e z u J = 150 °C TJ = 25 °C R il C - a 10 n e m c O r r -e o u ) N 1.1 o n ( o S ( -) S D I S R 0.8 0.5 1 - 50 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1000 76 I D = 10 mA 72 100 ) 68 a( IAV (A) at TA = 25 °C V( v a 10 S D I D V 64 1 60 IAV (A) at TA = 150 °C 0.1 56 0.0001 0.001 0.01 0.1 1 - 50 - 25 0 25 50 75 100 125 150 175 tin (s) TJ - Junction Temperature (°C)
Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature
www.vishay.com Document Number: 73010 4 S10-2545-Rev. B, 08-Nov-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2.0 100 V GS = 10 V I D = 30 A 1.7 c A n ( a t t n s ) i d 1.4 e r s r T e e z u J = 150 °C TJ = 25 °C R il C - a 10 n e m c O r r -e o u ) N 1.1 o n ( o S ( -) S D I S R 0.8 0.5 1 - 50 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1000 76 I D = 10 mA 72 100 ) 68 a( IAV (A) at TA = 25 °C V( v a 10 S D I D V 64 1 60 IAV (A) at TA = 150 °C 0.1 56 0.0001 0.001 0.01 0.1 1 - 50 - 25 0 25 50 75 100 125 150 175 tin (s) TJ - Junction Temperature (°C)
Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature
www.vishay.com Document Number: 73010 4 S10-2545-Rev. B, 08-Nov-10
