Datasheet 2N5210/MMBT5210 (ON Semiconductor) - 7

ManufacturerON Semiconductor
DescriptionNPN General Purpose Amplifier
Pages / Page9 / 7 — (continued) Typical Common Emitter Characteristics h fe 1.3. h ie. h oe …
RevisionA
File Format / SizePDF / 214 Kb
Document LanguageEnglish

(continued) Typical Common Emitter Characteristics h fe 1.3. h ie. h oe 1.2 h re 1.1 h oe. h re 1 h ie. 0.9. 0.8 I C = 1.0mA

(continued) Typical Common Emitter Characteristics h fe 1.3 h ie h oe 1.2 h re 1.1 h oe h re 1 h ie 0.9 0.8 I C = 1.0mA

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(continued) Typical Common Emitter Characteristics h fe 1.3
h ie
h oe 1.2 h re 1.1 h oe
h re 1 h ie
0.9
0.8 I C = 1.0mA
f = 1.0kHz
T A = 25°C h fe 0 5
10
15
20
V CE -COLLECTOR VOLTAGE (V) 25 Typical Common Emitter Characteristics CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C) 1.4 1.5
1.4
1.3
1.2 h ie VCE = 5.0V
f = 1.0kHz
I C = 1.0mA h re
h fe
h oe 1.1
1
0.9
0.8 h oe 0.7 h fe 0.6 h re 0.5
-100 h ie -50
0
50
100
T J -JUNCTIO N TEMP ERATURE (° C) 150 Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) CHARACTERISTI CS RELATI VE TO VALUE(VCE =5V) Typical Common Emitter Characteristics (f = 1.0 kHz) 2N5210/MMBT5210 NPN General Purpose Amplifier 100
f = 1.0kHz h oe 10
h ie and h re h re 3 1 h oe
h fe
h ie 0.1 0.01
0.1 0.2 h fe 0.5 1
2
5
10 20
I C -COLLECTOR CURRENT (mA) 50 100