Datasheet DGTD65T60S2PT (Diodes) - 3
| Manufacturer | Diodes |
| Description | 650V Field Stop IGBT |
| Pages / Page | 9 / 3 — DGTD65T60S2PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. … |
| File Format / Size | PDF / 1.6 Mb |
| Document Language | English |
DGTD65T60S2PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS
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DGTD65T60S2PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 – – V IC = 2mA, VGE = 0V T – 1.85 2.40 Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 60A, VGE = 15V Tvj = 175°C – 2.60 – T – 1.45 2.00 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 25A Tvj = 175°C – 1.35 – Gate-Emitter Threshold Voltage VGE(th) 4.0 5.0 6.0 V VCE = VGE, IC = 0.5mA Zero Gate Voltage Collector Current ICES – – 40 µA VCE = 650V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 95 – Gate-Emitter Charge Qge – 19 – nC VCE = 520V, IC = 60A, VGE = 15V Gate-Collector Charge Qgc – 47 – Input Capacitance Cies – 2,327 – V Reverse Transfer Capacitance Cres – 55 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 270 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH –
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 42 – Rise time tr – 54 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 142 – IC = 60A, RG = 7Ω, Fall Time tf – 40 – Inductive Load, Turn-on Switching Energy Eon – 0.92 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.53 – mJ Total Switching Energy Ets – 1.45 – Reverse Recovery Time trr – 110 – ns IF = 25A, Reverse Recovery Current Irr – 18 – A diF/dt = 500A/µs, Reverse Recovery Charge Q T rr – 1.10 – µC vj = 25°C Turn-on Delay Time td(on) – 45 – Rise time tr – 58 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 152 – IC = 60A, RG = 7Ω, Fall Time tf – 35 – Inductive Load, Turn-on Switching Energy Eon – 1.43 – Tvj = 175°C Turn-off Switching Energy Eoff – 0.53 – mJ Total Switching Energy Ets – 1.96 – Reverse Recovery Time trr – 205 – ns IF = 25A, Reverse Recovery Current Irr – 25 – A diF/dt = 500A/µs, Reverse Recovery Charge Q T rr – 2.67 – µC vj = 175°C DGTD65T60S2PT 3 of 9 March 2018 Document Number DS39669 Rev. 1 - 2
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© Diodes Incorporated
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 – – V IC = 2mA, VGE = 0V T – 1.85 2.40 Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 60A, VGE = 15V Tvj = 175°C – 2.60 – T – 1.45 2.00 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 25A Tvj = 175°C – 1.35 – Gate-Emitter Threshold Voltage VGE(th) 4.0 5.0 6.0 V VCE = VGE, IC = 0.5mA Zero Gate Voltage Collector Current ICES – – 40 µA VCE = 650V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 95 – Gate-Emitter Charge Qge – 19 – nC VCE = 520V, IC = 60A, VGE = 15V Gate-Collector Charge Qgc – 47 – Input Capacitance Cies – 2,327 – V Reverse Transfer Capacitance Cres – 55 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 270 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH –
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 42 – Rise time tr – 54 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 142 – IC = 60A, RG = 7Ω, Fall Time tf – 40 – Inductive Load, Turn-on Switching Energy Eon – 0.92 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.53 – mJ Total Switching Energy Ets – 1.45 – Reverse Recovery Time trr – 110 – ns IF = 25A, Reverse Recovery Current Irr – 18 – A diF/dt = 500A/µs, Reverse Recovery Charge Q T rr – 1.10 – µC vj = 25°C Turn-on Delay Time td(on) – 45 – Rise time tr – 58 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 152 – IC = 60A, RG = 7Ω, Fall Time tf – 35 – Inductive Load, Turn-on Switching Energy Eon – 1.43 – Tvj = 175°C Turn-off Switching Energy Eoff – 0.53 – mJ Total Switching Energy Ets – 1.96 – Reverse Recovery Time trr – 205 – ns IF = 25A, Reverse Recovery Current Irr – 25 – A diF/dt = 500A/µs, Reverse Recovery Charge Q T rr – 2.67 – µC vj = 175°C DGTD65T60S2PT 3 of 9 March 2018 Document Number DS39669 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated
