Datasheet 2N5210 (Fairchild) - 2

2N5210/MMBT5210 NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 V ICBO Collector Cutoff Current VCB = 35 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 200 600 IC = 1.0 mA, VCE = 5.0 V 250 IC = 10 mA, VCE = 5.0 V* 250 V Collector-Emitter Saturation Voltage I CE(sat) C = 10 mA, IB = 1.0 mA 0.7 V V Base-Emitter On Voltage I BE(on) C = 1.0 mA, VCE = 5.0 V 0.85 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 V, 30 MHz f= 20 MHz Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 250 900 f = 1.0 kHz NF Noise Figure IC = 20 µA, VCE = 5.0 V, 2.0 dB RS = 22 kΩ, f = 10 Hz to 15.7 kHz
3
I 3.0 dB C = 20 µA, VCE = 5.0 V, RS = 10 kΩ, f = 1.0 kHz
*
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%