Datasheet BC546, BC547, BC548, BC549, BC550 (Fairchild)
| Manufacturer | Fairchild |
| Description | NPN Epitaxial Silicon Transistor |
| Pages / Page | 4 / 1 — BC546/. 547/. BC546/547/548/549/550. 548. /549. Switching and … |
| File Format / Size | PDF / 46 Kb |
| Document Language | English |
BC546/. 547/. BC546/547/548/549/550. 548. /549. Switching and Applications. /55. NPN Epitaxial Silicon Transistor
Model Line for this Datasheet
Text Version of Document
BC546/ 547/ BC546/547/548/549/550 548 /549 Switching and Applications
• High Voltage: BC546, VCEO=65V
/55
• Low Noise: BC549, BC550 • Complement to BC556 ... BC560
0
TO-92 1 1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collector-Emitter Voltage : BC546 65 V : BC547/550 45 V : BC548/549 30 V VEBO Emitter-Base Voltage : BC546/547 6 V : BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA 700 mV IC=100mA, IB=5mA 900 mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV VCE=5V, IC=10mA 720 mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF NF Noise Figure : BC546/547/548 VCE=5V, IC=200µA 2 10 dB : BC549/550 f=1KHz, RG=2KΩ 1.2 4 dB : BC549 VCE=5V, IC=200µA 1.4 4 dB : BC550 RG=2KΩ, f=30~15000MHz 1.4 3 dB
hFE Classification
Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
• High Voltage: BC546, VCEO=65V
/55
• Low Noise: BC549, BC550 • Complement to BC556 ... BC560
0
TO-92 1 1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collector-Emitter Voltage : BC546 65 V : BC547/550 45 V : BC548/549 30 V VEBO Emitter-Base Voltage : BC546/547 6 V : BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA 700 mV IC=100mA, IB=5mA 900 mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV VCE=5V, IC=10mA 720 mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF NF Noise Figure : BC546/547/548 VCE=5V, IC=200µA 2 10 dB : BC549/550 f=1KHz, RG=2KΩ 1.2 4 dB : BC549 VCE=5V, IC=200µA 1.4 4 dB : BC550 RG=2KΩ, f=30~15000MHz 1.4 3 dB
hFE Classification
Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
