Datasheet MURS140, MURS160 (Diodes) - 2
| Manufacturer | Diodes |
| Description | Super Fast Rectifier |
| Pages / Page | 5 / 2 — MURS140 - MURS160. Maximum Ratings. Characteristic Symbol. MURS140. … |
| File Format / Size | PDF / 197 Kb |
| Document Language | English |
MURS140 - MURS160. Maximum Ratings. Characteristic Symbol. MURS140. MURS160. Unit. Thermal Characteristics. Value Unit
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MURS140 - MURS160 Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol MURS140 MURS160 Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 400 600 V DC Blocking Voltage (Note 10) VR RMS Reverse Voltage VR(RMS) 283 424 V Average Rectified Output Current @ TT = +135°C IO 1.0 A Non-Repetitive Peak Forward Surge Current I 8.3ms Single Half Sine-Wave Superimposed on Rated Load FSM 35 A
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 6) RθJT 15 °C/W Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
@ I 1.25 Forward Voltage F = 1.0A, TJ = +25°C V V @ I FM F = 1.0A, TJ = +150°C 1.05 Peak Reverse Current at Rated DC @ TA = +25°C 5.0 I μA Blocking Voltage (Note 10) @ T RM A = +150°C 150 Reverse Recovery Time (Note 8) trr 50 ns Forward Recovery Time (Note 9) tfr 50 ns Typical Total Capacitance (Note 7) CT 10 pF Notes: 6. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink. 7. Measured at 1.0MHz and applied reverse voltage of 4V DC. 8. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5. 9. Measured with IF = 1.0A, di/dt = 100A/μs, Duty Cycle ≤ 2.0%. 10. Short duration pulse test used to minimize self-heating effect. MURS140 - MURS160 2 of 5 October 2012 Document number: DS30130 Rev. 11 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol MURS140 MURS160 Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 400 600 V DC Blocking Voltage (Note 10) VR RMS Reverse Voltage VR(RMS) 283 424 V Average Rectified Output Current @ TT = +135°C IO 1.0 A Non-Repetitive Peak Forward Surge Current I 8.3ms Single Half Sine-Wave Superimposed on Rated Load FSM 35 A
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 6) RθJT 15 °C/W Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
@ I 1.25 Forward Voltage F = 1.0A, TJ = +25°C V V @ I FM F = 1.0A, TJ = +150°C 1.05 Peak Reverse Current at Rated DC @ TA = +25°C 5.0 I μA Blocking Voltage (Note 10) @ T RM A = +150°C 150 Reverse Recovery Time (Note 8) trr 50 ns Forward Recovery Time (Note 9) tfr 50 ns Typical Total Capacitance (Note 7) CT 10 pF Notes: 6. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink. 7. Measured at 1.0MHz and applied reverse voltage of 4V DC. 8. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5. 9. Measured with IF = 1.0A, di/dt = 100A/μs, Duty Cycle ≤ 2.0%. 10. Short duration pulse test used to minimize self-heating effect. MURS140 - MURS160 2 of 5 October 2012 Document number: DS30130 Rev. 11 - 2
www.diodes.com
© Diodes Incorporated
