Datasheet BC846BPN (NXP) - 7
| Manufacturer | NXP |
| Description | 65 V, 100 mA NPN/PNP general-purpose transistor |
| Pages / Page | 15 / 7 — NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose … |
| File Format / Size | PDF / 133 Kb |
| Document Language | English |
NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose transistor. Fig 5
Model Line for this Datasheet
Text Version of Document
NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor
006aaa536 006aaa534 1 1.3 VBEsat (V) VBE 1.1 (V) 0.8 0.9 (1) 0.7 (2) (3) 0.6 0.5 0.3 0.4 0.1 10−1 103 102 1 10 10−1 103 102 1 10 IC (mA) IC (mA) VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C
Fig 5. TR1 (NPN): Base-emitter voltage as a function Fig 6. TR1 (NPN): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
006aaa535 006aaa537 10 103 VCEsat (V) fT (MHz) 1 102 10−1 (1) (2) (3) 10−2 10 10−1 103 102 1 10 1 102 10 IC (mA) IC (mA) IC/IB = 20 VCE = 5 V; Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 7. TR1 (NPN): Collector-emitter saturation Fig 8. TR1 (NPN): Transition frequency as a function voltage as a function of collector current; of collector current; typical values typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 7 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
006aaa536 006aaa534 1 1.3 VBEsat (V) VBE 1.1 (V) 0.8 0.9 (1) 0.7 (2) (3) 0.6 0.5 0.3 0.4 0.1 10−1 103 102 1 10 10−1 103 102 1 10 IC (mA) IC (mA) VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C
Fig 5. TR1 (NPN): Base-emitter voltage as a function Fig 6. TR1 (NPN): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
006aaa535 006aaa537 10 103 VCEsat (V) fT (MHz) 1 102 10−1 (1) (2) (3) 10−2 10 10−1 103 102 1 10 1 102 10 IC (mA) IC (mA) IC/IB = 20 VCE = 5 V; Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 7. TR1 (NPN): Collector-emitter saturation Fig 8. TR1 (NPN): Transition frequency as a function voltage as a function of collector current; of collector current; typical values typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 7 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
