Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | Dual NPN Bipolar Transistor |
| Pages / Page | 11 / 3 — BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC846BDW1. … |
| Revision | 11 |
| File Format / Size | PDF / 107 Kb |
| Document Language | English |
BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC846BDW1. Figure 1. DC Current Gain at VCE = 5 V
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BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC846BDW1
600 600 V V CE = 10 V CE = 5 V 500 500 150°C 150°C 400 400 25°C 300 25°C 300 200 200 , DC CURRENT GAIN −55°C −55 , DC CURRENT GAIN °C FE FE h h 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at VCE = 5 V Figure 2. DC Current Gain at VCE = 10 V
0.25 0.3 AGE (V) I AGE (V) T C/IB = 10 T IC/IB = 20 VOL 0.25 0.20 TION TION VOL 0.2 0.15 TURA TURA 0.15 150°C 0.10 25°C 150°C 25°C 0.1 0.05 −55°C 0.05 −55°C , COLL−EMITT SA , COLL−EMITT SA 0.00 0 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 CE(sat) CE(sat) V I V C, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. VCE(sat) at IC/IB = 10 Figure 4. VCE(sat) at IC/IB = 20
1.10 1.10 AGE (V) I AGE (V) I T C/IB = 10 C/IB = 20 1.00 T 1.00 0.90 −55°C 0.90 −55°C 0.80 TION VOL 25°C 0.80 TION VOL 0.70 0.70 25°C TURA TURA 0.60 150°C 0.60 0.50 0.50 150°C 0.40 0.40 0.30 0.30 , BASE−EMITT SA , BASE−EMITT SA 0.20 0.20 sat) sat) 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 BE( BE( V I V C, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. VBE(sat) at IC/IB = 10 Figure 6. VBE(sat) at IC/IB = 20 www.onsemi.com 3
600 600 V V CE = 10 V CE = 5 V 500 500 150°C 150°C 400 400 25°C 300 25°C 300 200 200 , DC CURRENT GAIN −55°C −55 , DC CURRENT GAIN °C FE FE h h 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at VCE = 5 V Figure 2. DC Current Gain at VCE = 10 V
0.25 0.3 AGE (V) I AGE (V) T C/IB = 10 T IC/IB = 20 VOL 0.25 0.20 TION TION VOL 0.2 0.15 TURA TURA 0.15 150°C 0.10 25°C 150°C 25°C 0.1 0.05 −55°C 0.05 −55°C , COLL−EMITT SA , COLL−EMITT SA 0.00 0 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 CE(sat) CE(sat) V I V C, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. VCE(sat) at IC/IB = 10 Figure 4. VCE(sat) at IC/IB = 20
1.10 1.10 AGE (V) I AGE (V) I T C/IB = 10 C/IB = 20 1.00 T 1.00 0.90 −55°C 0.90 −55°C 0.80 TION VOL 25°C 0.80 TION VOL 0.70 0.70 25°C TURA TURA 0.60 150°C 0.60 0.50 0.50 150°C 0.40 0.40 0.30 0.30 , BASE−EMITT SA , BASE−EMITT SA 0.20 0.20 sat) sat) 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 BE( BE( V I V C, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. VBE(sat) at IC/IB = 10 Figure 6. VBE(sat) at IC/IB = 20 www.onsemi.com 3
