Datasheet BC846, BC847, BC848, BC849, BC550 (Infineon) - 7
| Manufacturer | Infineon |
| Description | NPN Silicon AF Transistors |
| Pages / Page | 19 / 7 — BC846...-BC850... DC current gain. Collector-emitter saturation voltage. … |
| File Format / Size | PDF / 187 Kb |
| Document Language | English |
BC846...-BC850... DC current gain. Collector-emitter saturation voltage. Base-emitter saturation voltage
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Text Version of Document
BC846...-BC850... DC current gain
hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V IC = ƒ(VCEsat), hFE = 20 EHP00365 3 EHP00367 10 10 2 mA h 5 100 C Ι FE C 25 C 100 C 25 C -50 C -50 C 102 101 5 5 0 101 10 5 5 0 10 10 -1 10-2 5 10 -1 0 5 10 5 101 mA 10 2 0 0.1 0.2 0.3 0.4 V 0.5 Ι V C CEsat
Base-emitter saturation voltage Collector cutoff current
ICBO = ƒ(TA) IC = ƒ(VBEsat), hFE = 20 VCB = 30 V EHP00364 2 EHP00415 10 10 4 nA Ι Ι C mA CB0 100 C max 25 C 10 3 -50 C 101 5 5 typ 10 2 5 100 1 10 5 5 0 10-1 10 0 0.2 0.4 0.6 0.8 V 1.2 0 50 100 ˚C 150 V T BEsat A 7 2007-04-20
hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V IC = ƒ(VCEsat), hFE = 20 EHP00365 3 EHP00367 10 10 2 mA h 5 100 C Ι FE C 25 C 100 C 25 C -50 C -50 C 102 101 5 5 0 101 10 5 5 0 10 10 -1 10-2 5 10 -1 0 5 10 5 101 mA 10 2 0 0.1 0.2 0.3 0.4 V 0.5 Ι V C CEsat
Base-emitter saturation voltage Collector cutoff current
ICBO = ƒ(TA) IC = ƒ(VBEsat), hFE = 20 VCB = 30 V EHP00364 2 EHP00415 10 10 4 nA Ι Ι C mA CB0 100 C max 25 C 10 3 -50 C 101 5 5 typ 10 2 5 100 1 10 5 5 0 10-1 10 0 0.2 0.4 0.6 0.8 V 1.2 0 50 100 ˚C 150 V T BEsat A 7 2007-04-20
