Datasheet BCX70 (Multicomp) - 2
| Manufacturer | Multicomp |
| Description | NPN Silicon Epitaxial Planar Transistor 0.1 A, 45 V, SOT23 |
| Pages / Page | 5 / 2 — Parameter:. Symbol:. Test Conditions:. Min:. Typ:. Max:. Unit: |
| File Format / Size | PDF / 497 Kb |
| Document Language | English |
Parameter:. Symbol:. Test Conditions:. Min:. Typ:. Max:. Unit:
Model Line for this Datasheet
Text Version of Document
Maximum Ratings & Characteristics: Tamb=25o
Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:
Collector - Base Breakdown Voltage V I =-10μA I =0 45 V (BR)CBO C E Collector - Emitter Breakdown Voltage V I =-10mA I =0 45 V (BR)CEO C B Emmiter - Base Breakdown Voltage V I =-1.0μA I =0 5 V (BR)EBO E C I V =-45V,V =0 20 nA CBO CE BE I V =4V,I =0 20 nA EBO EB C DC Current Gain h V =5V,I =10μA G 20 140 FE CE C H 20 200 J 40 300 K 100 460 V =5V,I =2mA G 120 220 CE C H 180 310 J 250 460 K 380 630 V =5V,I =50mA G 50 CE C H 70 J 90 K 100 Collector - Emitter Saturation Voltage V I =10mA, I =0.25mA 0.12 0.35 V CE(sat) C B I =50mA, I =1.25mA 0.2 0.55 C B Base - Emitter Saturation Voltage V I =10mA, I =0.25mA 0.7 0.85 V BE(sat) C B I =50mA, I =1.25mA 0.83 1.05 C B Base Emitter Voltage V I =2.0mA ,V =5V 0.55 0.65 0.75 V BE C CE Transition Frequency f V =5V, I =20mA, 250 MHz T CE C f=100MHz Collector-base capacitance C V =10V,I =0,f=1MHz 3 pF cb CB E Emitter-base capacitance C V =0.5V,I =0,f=1MHz 8 Eb EB E NF V =5V, I =100uA 2 dB CE C f=1kHz,R =1kΩ S O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R
Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:
Collector - Base Breakdown Voltage V I =-10μA I =0 45 V (BR)CBO C E Collector - Emitter Breakdown Voltage V I =-10mA I =0 45 V (BR)CEO C B Emmiter - Base Breakdown Voltage V I =-1.0μA I =0 5 V (BR)EBO E C I V =-45V,V =0 20 nA CBO CE BE I V =4V,I =0 20 nA EBO EB C DC Current Gain h V =5V,I =10μA G 20 140 FE CE C H 20 200 J 40 300 K 100 460 V =5V,I =2mA G 120 220 CE C H 180 310 J 250 460 K 380 630 V =5V,I =50mA G 50 CE C H 70 J 90 K 100 Collector - Emitter Saturation Voltage V I =10mA, I =0.25mA 0.12 0.35 V CE(sat) C B I =50mA, I =1.25mA 0.2 0.55 C B Base - Emitter Saturation Voltage V I =10mA, I =0.25mA 0.7 0.85 V BE(sat) C B I =50mA, I =1.25mA 0.83 1.05 C B Base Emitter Voltage V I =2.0mA ,V =5V 0.55 0.65 0.75 V BE C CE Transition Frequency f V =5V, I =20mA, 250 MHz T CE C f=100MHz Collector-base capacitance C V =10V,I =0,f=1MHz 3 pF cb CB E Emitter-base capacitance C V =0.5V,I =0,f=1MHz 8 Eb EB E NF V =5V, I =100uA 2 dB CE C f=1kHz,R =1kΩ S O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R
